Lehrstuhl für Technische Elektrophysik - TU München

Publikationen am Lehrstuhl für Technische Elektrophysik


2018  2017  2016  2015  2014  2013  2012  2011  2010  2009  2008  2007  2006  2005  2004  2003  2002  2001  2000  1999  1998  1997  1996  1995  1994 

2018  Top
  • Basler V., Wagner A., Hoelzl W., Wachutka W.:
    Dynamic Characterisation and Optimisation of Multiply Contacted Power Busbars.
    In: Proceedings of the 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 13.-17.05.2018, Chicago, USA (ISPSD), 2018, pp. 252-255.
  • Bosetti G., Manz J., Krumbein U., Schrag G.:
    Reliable Compact Models for the Investigation of Acoustic High-Frequency Effects in MEMS Transducers.
    In: EUROSENSORS, 9-12 September 2018, Graz, Austria, 2018.
  • G. Wachutka:
    Virtual Prototyping of High Power Devices and Modules.
    In: Proceedings of the Forum on the Science and Technology of Silicon Materials, Okayama, Japan, 19.11. - 21.11.2018 (Silicon Forum), 2018, pp. 94-101.
  • Gerstenmaier Y. C. Wachutka G.:
    Thermionic Generators with Linear and Non-Linear Electron Dispersion Relations: Chances and Limits.
    In: Proceedings of the Sustainable Industrial Processing Summit, 4.-7.11.2018, Rio de Janeiro, Brazil (SIPS 2018), 2018.
  • Groos, G., Helmut, D., Wachutka, G.:
    The Latent Failure Issue Seen from the Other Side: Normal Operation after ESD Induced Degeneration of Devices and Systems.
    In: Proceedeings of the 40th Electrical Overstress/Electrostatic Discharge Symposium, 23.-28.09.2018, Reno, NV, USA ((EOS/ESD)), 2018, pp. 1 - 10.
  • Helmut, D., Wachutka, G., Groos, G.:
    Extracting Large-Signal Transient Characteristics of Power Electronic Devices Using Nanosecond Pulsing Techniques.
    In: Proceedings of the 20th European Conference on Power Electronics and Applications, 17.-21.09.2018, Riga, Latvia ((EPE'18 ECCE Europe)), 2018, pp. 1 - 7.
  • Huang, Y., Lechner, B., Wachutka, G.:
    The Impact of Non-ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes.
    In: Proceedings of the European Conference for Silicon Carbid and Related Materials, 02.-06-09.2018, Birmingham, U. K. (ECSCRM 2018), 2018.
  • J. Manz, G. Schrag, A. Dehe, U. Krumbein, G. Wachutka:
    Investigations on a Novel Silicon MEMS Microphone Concept for a High Signal-to-Noise Ratio.
    In: MICROSYSTEMS TECHNOLOGY IN GERMANY (Proceedings of the smartsystem integration), 11. - 12. April 2018, Dresden Germany, 2018, pp. 54-55.
  • Lechner B., Huang Y., Wachutka G.:
    Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier.
    In: Proccedings of the 12th International Conference on Advanced Semiconductor Devices and Microsystems, 21.-24.10.2018, Smolencie, Slovakia (ASDAM), 2018, pp. 9-12.
  • Lechner, B., Huang, Y., Wachutka, G.:
    Temperature Dependence of SRH Carrier Lifetimes in the Intrinsic Region of a 4H-SiC PiN Rectifier.
    In: Proceedings of the European Conference for Silicon Carbid and Related Materials, 02.09.2018-06-09.2018, Birmingham, U.K. (ECSCRM 2018), 2018.
  • Seidl, M., Gehring, M., Krumbein, U. and Schrag, G.:
    Simulation-based design of a micro fluidic transportation system for mobile applications based on ultrasonic actuation.
    In: Proceedings of the 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 15.-18.04.2018, Toulouse, France (EuroSimE), 2018, pp. 1-6.
  • T. Kuenzig, A. Dehe, U. Krumbein, G. Schrag:
    Virtual design and optimization studies for industrial silicon microphones applying tailored system-level modeling.
    In: Journal of Micromechanics and Microengineering, 14.03.2018 (28), 2018.
  • Wachutka G.:
    High-Fidelity Predictive Simulation of My-Structured Devices and Systems at the Rim of the Safe-Operating Area and Beyond.
    In: Proceedings of the 12th International Conference on Advanced Semiconductor Devices and Microsystems, Smolencie, Slovakia (ASDAM), 2018, pp. 187-194.

    2017  Top
  • Anzinger S., Manz J., Dehe A., Schrag G.:
    A Comb-Based Capacitive MEMS Microphone with High Signal-to-Noise Ratio: Modeling and Noise-Level-Analysis.
    In: Proceedings of the Eurosensors, 3 - 6 September, Paris, France, Vol. 1, Paris, 2017, pp. 346.
  • Behlert R., Gehring M., Mehner H., Wieland R., Schrag G .:
    Entwicklung eines bionisch inspirierten, mikromechanischen Biegewandlers für effizienten fluidischen Massentransport.
    In: Proceedings of the MikroSystemTechnik Kongress, 23.-25. Oktober, München, Deutschland, Berlin Offenbach, 2017.
  • Behlert R., Gehring M., Mehner H., Wieland R., Schrag G.:
    Design, Modeling and Characterization of a Bionically Inspired Integrated Micro-Flapper for Cooling and Venting Applications.
    In: Proceedings of Eurosensor, 3-6 September, Paris, France, 2017.
  • Behlert R., Schrag G., Wachutka G.:
    Efficient Fluid Transport by a Bionically Inspired Micro-Flapper: Fluidic Investigatins Using Fully Coupled Finite Element Simulation.
    In: Proceedings of SPIE Microtechnologies, 8-10 May, Barcelona, Spain, 2017.
  • Bosetti G., Manz J., Schrag G., Dehe A.:
    Modeling of an out-of-plane capacitive MEMS transducer with dynamically coupled electrodes.
    In: Proceedings of DTIP 2017, the Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 29. May - 1. June, Bordeaux, France, 2017, pp. 1-5.
  • Gehring M., Schrag G., Wachutka G.:
    Effizienter fluidischer Transport mittels mikromechanischer Aktoren: Numerische Herausforderungen beim Entwurf / Efficient Transport of Fluids using Micromechanical Actuators: Numerical Challenges within the Design Process.
    In: Proceedings of the MikroSystemTechnik Kongress, 23.-25. Oktober 2017, München, Deutschland, Berlin Offenbach, 2017, pp. 58-61.
  • Gerstenmaier Y.C., Wachutka G.:
    Rigorous theory of graded thermoelectric converters including finite heat transfer coefficients.
    In: Journal of Applied Physics 122, 204501, 28 November, Vol. 122 (20), 2017, pp. 15.
  • Gerstenmaier Y.C., Wachutka G.:
    Thermoelectric converters with optimum graded materials and current distribution in one dimension and three dimensions.
    In: Physica Status Solidi B 1600690, July 2017 (pss b), Vol. 254 (No. 7), 2017, pp. 19.
  • Groos G., Wachutka G., Helmut D.:
    The Latent Failure Issue Seen from the Other Side: Normal Operation after ESD Induced Degeneration of Devices and Systems.
    In: Journal of ESD, October 2017 (ESD), Vol. Tagungsband ESD Forum 2017 (15), 2017.
  • Helmut D., Wachutka G., Groos G.:
    ESD damage without failure, followed by EOS: A case study on automotive smart power IC's.
    In: Fachtagung Zuverlässigkeit und Entwurf, 18-20 September, Cottbus, Germany, Berlin, 2017.
  • Helmut D., Wachutka G., Groos G.:
    Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP).
    In: 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, (Microelectronics Reliability), Serptember 2017 (Microelectronics Reliability), Vol. 76-77, 2017, pp. 97-101.
  • Korzenietz A., Wachutka G., Hille F., Sandow C., Niedernostheide F.-J.:
    Free-Carrier Absorption Experiments for the Investigation of the Physical Device Properties in IGBTs with Hydrogen-Related Donors.
    In: Proceedings of ISPSD, 28 May1 June, Sapporo, Japan, 2017, pp. 163-166.
  • Manz J., Bosetti G., Dehe A., Schrag G.:
    A novel silicon "star-comb" microphone concept for enhanced signal-to-ratio: modeling, design and first prototype.
    In: Proceedings of 19th International Conference on Solid-State Sensors, Actuators and Microsystems, 18-22 June, Kaohsiung, Taiwan (Transducers), 2017, pp. 69-70.
  • Manz J., Dehe A., Schrag G.:
    Modeling high signal-to-noise ratio in a novel silicon MEMS microphone with comb readout.
    In: Proceedings of SPIE Microtechnologies, 8-10 May, Barcelona, Spain, 2017.
  • Manz J., Schrag G., Dehe A., Krumbein U., Wachutka G.:
    Modellierung eines neuartigen Kamm-Mikrofons mit hohem Signal-Rausch-Verhältnis.
    In: Proceedings of the MikroSystemTechnik Kongress, 23.-25. Oktober, München, Deutschland, Berlin/Offenbach, 2017.
  • Schrag G.:
    Virtuelles Prototyping - Entwurf von integrierten, multifunktionalen Mikrosystemen.
    In: Journal of TECHNIK IN BAYERN, Mai (TECHNIK IN BAYERN) (05/2017), 2017, pp. 12-13.
  • Schrag G., Kuenzig T.:
    Towards High Fidelity Silicon Microphones: Evaluating of Industrial Microsystems Applying Tailored System-level Models.
    In: Proceedings of 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, April, 2 - 5, Dresden, Germany, 2017, pp. 6.
  • Schrag G., Kuenzig T., Wachutka G.:
    Optimierung industrieller Mikrosysteme mit Hilfe maßgeschneideter Modelle: Systemsimulationen eines Silizium-Mikrophons.
    In: Proceedings of MikroSystemTechnik Kongress (VDE), 23 25. Oktober, München, Deutschland, 2017, pp. 793-796.

    2016  Top
  • Basler V., Basler T., Pertermann E., Baburske R., Lutz J., Wachutka G.:
    Compact PIN-Diode Model including Dynamic Avalanche and Lifetime Control in MATLAB.
    In: Proceedings of MATLAB Expo 2016, Muenchen, Germany, 2016.
  • Basler V., Hoelzl W., Wachutka G.:
    Physical Modeling and High-Fidelity Simulation of the Transient Behavior of Multiply-Contacted Power Busbars.
    In: Proceedings of PCIM Europe 2016, Nuernberg, Germany, 2016, pp. 543-549.
  • Behlert R., Schrag G., Wachutka G. Wieland R., Kutter C.:
    Design of an Integrated Piezoelectric Micro-Flapper Based on Bionic Principles.
    In: Proceedings of DTIP 2016, Budapest, Hungary, 2016, pp. 79-82.
  • Huang Y., Wachutka G.:
    Comparative Study of Contact Topographies of 4,5 kV SiC MPS Diodes for Optimizing the Forward Characteristics.
    In: Proceedings of SISPAD 2016 (Simulation of Semiconductor Processes and Devices 2016), Nuernberg, Germany, 2016, pp. 117-120.
  • Huang Y., Erlbacher T., Buettner J., Wachutka G.:
    A Trade-off Between Nominal Forward Current Density and Surge Current Capability for 4,5 kV SiC MPS Diodes.
    In: Proceedings of ISPSD 2016, Prague, Czech Republik, 2016, pp. 63-66.
  • Schrag G., Kuenzig T., Dehe A.:
    Enhanced Design of Microsystems by Combining Lumped and Distributed System-level Models.
    In: Proceedings of Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS 2016, Budapest, Hungary, 2016, pp. 61-65.
  • Toechterle C., Pfirsch F., Sandow C., Wachutka G.:
    Influence of Quasi-3D Filament Geometry on the Latch-up Treshold of High-Voltage Trench-IGBTs.
    In: Proceedings of SISPAD 2016 (SISPAD 2016), Nuernberg, Germany, 2016, pp. 177-180.

    2015  Top
  • Erlbacher T., Buettner T., Bauer A.J.,Huang Y.,Wachutka G.,Frey L.:
    Requirements and Design of 4,5kV 4H-SiC Merged pin/Schottky Diodes for Wind power.
    In: Proceedings of the 39th Workshop on Compound Semiconductor Devices and Integrated Circuits, June 8-10, Smolenice Castle, Slovakia, 2015, pp. 83-84.
  • Gawlina-Schmidl Y.:
    Analyse ionenreduzierter Ausfallmechanismen in hochintegrierten CMOS-Speicherzellen.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., , Shaker Verlag, Aachen, Germany, 2015, 132 pages.
  • Kuenzig T., Schrag G., Dehe A., Wachutka G.:
    Performance and Noise Analysis of Capacitive Silicon Microphones Using Tailored System-Level Simulation.
    In: Proceedings of the 18th Int. Conf. on Solid State Sensors, Actuators and Microsystems, June 21-25, Anchorage, Alaska, USA, Anchorage, Alaska, USA, 2015, pp. 2192-2195.
  • Kuenzig T., Schrag G., Dehe A., Wachutka G.:
    Modeling Distributed Electrostatic Effects in Silicon Microphones and Their Impact on the Performance.
    In: Proceedings of SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 9517 L, 2015, pp. 95171L1-95171L6.
  • Manz J., Wachutka G., Schrag G.:
    Fluidic Damping in Micro- and Nano-Scale Mechanical Resonators in the Molecular Flow Regime: A Momentum Transfer Based Analytical Approach.
    In: Proceedings of the 18th Int. Conf. on Solid State Sensors, Actuators and Microsystems, June 21-25, Anchorage, Alaska, USA, 2015, pp. 2168-2171.
  • Niessner M.:
    Modellierung und Simulation des elektro-fluid-mechanisch gekoppelten Verhaltens von Mikrobauteilen auf der Systemebene.
    Series: Ausgewählte Probleme der Elektronik und Mikromechatronik, Eds.: Wachutka G. und Schmitt-Landsiedel D., , Shaker Verlag, Aachen, Germany, 2015, 200 pages.
  • Reutter Teresa:
    Charakterisierung und Optimierung piezoelektronischer MEMS-Mikrophone mittels physikalischer Modellierung und Simulation.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. und Schmitt-Landsiedel D., Vol. 47, , Shaker Verlag, Aachen, Germany, 2015, 132 pages.
  • Schrag G., Kuenzig T., Pham D., Glacer C., Dehe A., Wachutka G.:
    Acoustic High-Frequency Effects Inside the Package of Capacitive Silicon Microphones and Their Impact on the Device Perfomance.
    In: Proceedings of SPIE 9517, Smart Sensors, Actuators and MEMS VII and Cyber physical Systems, May, 4-6, 2015, Barcelona, Spain, 2015, pp. 95170M1-95170M6.
  • Schrag ., Kuenzig T.:
    Maßgeschneiderte Modelle für Mikrosysteme mit Hilfe verallgemeinerter Kirchhoffscher Netze.
    In: Nichtelektrische Netzwerke: Wie die Systemtheorie hilft, die Welt zu verstehen, Series: Dresdner Beiträge zur Sensorik, Eds.: Gerald Gerlach, Vol. 60, TUDpress, Dresden ,Germany, 2015, pp. 37-46.
  • Weiß Chr.:
    Höhenstrahlungsresistenz von Silizium-Hochleistungsbauelementen.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 46, , Shaker Verlag, Aachen, Germany, 2015, 92 pages.
  • Wieland R., Nguyen K., Seidelmann U., Scholz M., Schrag G.:
    Wafer Edge Protection Kit for MEMS and TSV Si-Etching.
    In: Proc. SPIE 9517, Smart Sensors, Actuators and MEMS VII and Cyber Physical Systems, May 4-6, Barcelona, Spain, 2015, pp. 951724-1-951724-8.

    2014  Top
  • Bechtold T., Schrag G., Feng L.:
    Enabling Technologies for System-Level Simulation of MEMS.
    In: Proceedings of 5th Electronics System-Integration Technology Conference, September 16-18, Helsinki, Finland, 2014.
  • Behlert R., Kuenzig T., Schrag G., Wachutka G.:
    Theoretical and Experimental Investigation on Failure Mechanisms Occuring During Long-Term Cycling of Electrostatic Actuators.
    In: Proceedings of the 15th international conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, April, 7 - 9, Gent, Belgium (EuroSimE 2014), 2014, pp. Paper 067.
  • Iannacci J., Serra E., Sordo G., Bonaldi M., Borrielli A., Schmid U., Bittner A., Schneider M., Kuenzig T., Schrag G., Pandraud G. and Sarro P. M.:
    MEMS-Based Multi-Modal Vibration Energy Harvesters for Ultra-Low Power Autonomous Remote and Distributed Sensing.
    In: Proceedings of the 14th Mechatronics Forum International Conference, June, 16-18, Karlstad, Sweden (Mechatronics 2014), 2014, pp. pp 8.
  • Kuenzig T., Muschol T., Iannacci J., Schrag G., Wachutka G.:
    Analysis of RF-MEMS Switches in Failure Mode: Towards a More Robust Design.
    In: Thermal, mechanical and multi-physics simulation and experiments in microelectronics and microsystems (eurosime), 2014 15th international conference on (EuroSimE 2014), Vol. Paper 057, 2014, pp. 1-6.
  • Kuenzig T., Schrag G., Nawaz M., Herrmann M., Dehe A., Wachutka G.:
    System-Level Modeling of Silicon Microphones Including Distributed Effects.
    In: Proceedings of EUROSENSORS 2014, September 7-10, 2014, Brescia, Italy, in Procedia Engineering vol. 87 (2014), Vol. vol. 87 (2014), 2014, pp. pp. 636-639.
  • Manz J., Schrag G., Wachutka G.:
    Simulation and Measurement of Pressure Dependent Q-factors in NEMS Resonators.
    In: Proceedings of the 15th international conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, April, 7 - 9, Gent, Belgium (EuroSimE 2014), 2014, pp. Paper 111.
  • Manz J., Wachutka G., Schrag G.:
    Systematic Investigation of Fluidic Damping in Mechanical Resonators with Dimensions Ranging from Micro- to Nano-Scale.
    In: Proceedings of EUROSENSORS 2014, September 7-10, 2014, Brescia, Italy, in Procedia Engineering vol. 87, 2014, 2014, pp. pp. 464-467.
  • Sandow C., Baburske R., Niedernostheide F.-J., Pfirsch F., Toechterle C.:
    Exploring the Limits of the Safe Operation Area of Power Semiconductor Devices.
    In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 9-11, Yokohama, Japan (SISPAD 2014), 2014, pp. pp. 49-52.
  • Schrag G., Korzenietz A., Oberndoerfer J., WachutkaG.:
    Optoelectronic High Accurary Setup for the Analysis of Internal Temperature and Carrier Profiles in Semiconductor Power Devices.
    In: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, June 15-19, 2014 Waikoloa, Hawaii, USA (ISPSD 2014), 2014, pp. 151-154.
  • Toechterle C., Pfirsch F., Sandow C., Wachutka G.:
    Evolution of Current Filaments Limiting the Safe-Operation Area of High-Voltage Trench-IGBTs.
    In: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, June 15-19, 2014 Waikoloa, Hawaii, USA (ISPSD 2014), 2014, pp. 135-138.
  • Wachutka G.:
    Energy Harvesting Using Thermoelectric Microgenerators: A Critical Analysis.
    In: Proceedings of the 10th International Conference on Advanced Semiconductor Devices and Microsystems, October 20-22, Smolenice Castle, Slovakia (ASDAM 2014), 2014, pp. 1-4.
  • Wachutka G.:
    Virtual Testing of High Power Devices at the Rim of the Safe Operating Area and Beyond.
    In: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's, June 15-19, 2014 Waikoloa, Hawaii, USA (ISPSD 2014), 2014, pp. 6-11.

    2013  Top
  • Bechtold T., Schrag G ., Feng L. (eds.):
    System-Level Modeling of MEMS.
    Series: Advanced Micro & Nanosystems, Vol. 10, , Wiley-VHC, Weinheim, 2013.
  • Bechtold T., Schrag G., Feng L.:
    Enabling Technologies for System-Level Simulation of MEMS.
    In: Proceedings of 14th Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, April 15-19 (EuroSimE 2013, Wrozlaw, Poland), 2013.
  • Iannacci J., Serra R., Di Criscienzo R., Sordo G., Gottardi M., Borrielli A., Bonaldi M., Kuenzig T., Schrag G., Pandraud G., Sarro P.M.:
    Multi-modal vibration based MEMS energy harvesters for ultra-low power wireless functional nodes.
    In: Microsystem Technologies (Microsyst Technol), Vol. vol .19 (issue 12), 2013.
  • Iannacci J., Sordo G., Gottardi M., Künzig T., Schrag G ., Wachutka G.:
    An Energy Harvester Concept for Electrostatic Conversion Manufactured in MEMS Surface Micromachining Technology.
    In: Proceedings of the International Semiconductor Conference Dresden-Grenoble, September 26-27 (ISCDG 2013), Dresden, 2013.
  • Müller S., Zahner T., Singer F.: Schrag G.: Wachutka G.:
    Evaluation of Thermal Transient Characterization Methodologies for High-Power LED Applications.
    In: Microelectronics Journal, Vol. 44 (11), 2013, pp. 1005-1010.
  • Niessner M., Schrag G.:
    Mixed-Level Approach for the Modeling of Distributed Effects in Microsystems.
    In: System-Level Modeling of MEMS, Series: Advanced Micro & Nanosystems, Vol. 10, Wiley-VHC, Weinheim, 2013, pp. 163-189.
  • Schrag G., Wachutka G.:
    System-Level Modeling of MEMS Using Generalized Kirchhoffian Networks-Basic Principles.
    In: System-Level Modeling of MEMS, Series: Advanced Micro & Nanosystems, Vol. 10, Wiley-VHC, Weinheim, 2013, pp. 19-51.
  • Schrag G., Künzig T., Niessner M.:
    Problem-adapted Modeling of RF MEMS Switches.
    In: Proceedings of 16th International Conference on Sensors and Measurement Technology (AMA Sensors, Nürnberg, May 14-16), 2013, pp. 186-191, DOI 10.5162.
  • Schrag G., Künzig T., Wachutka G.:
    Modeling Reliability Issues in RF MEMS Switches.
    In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 3-5 2013, Glasgow, Scotland, UK (SISPAD 2013), 2013, pp. 432-435.
  • Schrag G., Reutter T., Wachutka G.:
    Finite Element Simulations Combined with Statistical Analysis of Variance: Exploring the Potential of Piezoelectric MEMS Microphones.
    In: Proceedings of the 17th international Conference on Solid State Sensors, Actuators and Microsystems, June 16-20, Barcelona, Spain (Transducers), 2013, pp. 1452-1455.
  • Töchterle C., Pfirsch F., Sandow C., Wachutka G.:
    Analysis of the Latch-up Process and Current Filamentation in High-Voltage Trench-IGBT Cell Arrays.
    In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 3-5 2013, Glasgow, Scotland, UK (SISPAD 2013), 2013, pp. 296-299.
  • Töchterle C., Pfirsch F., Sandow C., Wachutka G.:
    Stromfilamentierungen und Latch-up-Grenze in 3,3kV-Trench-IGBTs.
    In: 42. Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, 28.-29.10.2013, Freiburg i.B., Germany, 2013.
  • Wachutka G.:
    The Art of Modeling and Predictive Simulation in Power Electronics and Microsystems.
    In: Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Gdynia, Poland, June 20-22, 2013, Lodz, Poland, 2013, pp. 48-52.
  • Zeising V., Basler T., Pertermann E., Lutz J., Wachutka G.:
    Physikalisches Kompaktmodell für das Reverse-Recovery-Verhalten von PIN-Dioden mit dynamischem Avalanche und Lebensdauereinstellung.
    In: 42. Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, 28.-29.10.2013, Freiburg i.B., Germany, 2013.

    2012  Top
  • Gerstenmaier Y. C., Wachutka G.:
    Unified theory for inhomogeneous thermoelctric generators and coolers including multistage devices.
    In: Physical Review E, Vol. E 86 (056703), 2012, pp. 056703-1 -10.
  • Künzig T., Iannacci J., Schrag G ., Wachutka G.:
    Study of an active thermal recovery mechanism for an electrostatically actuated RF-MEMS switch.
    In: Proceedings of the 13th Intern. Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, April 16-18, Cascais, Portugal (EuroSime), 2012.
  • Künzig T., Schrag G., Iannacci J., Wachutka G.:
    Improving the reliability of electrostatically actuated RF-MEMS switches: FEM simulations and measurements on a thermal recovery mechanism.
    In: Proceedings of the 13th Mechatronics Forum International Conference, Sept. 17-19, Linz, Austria (Mechatronics), ibidem, 2012, pp. 340-345.
  • Künzig T., Schrag G ., Iannacci J.:
    Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology.
    In: Proceedings of the 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis , October 1-5, Cagliari, Italy (ESREF), Amsterdam, 2012.
  • Niessner M., Schrag G., Iannacci J. and Wachutka G.:
    Squeeze-Film Damping in Perforated Microstructures: Modeling, Simulation and Pressure-Dependent Experimental Validation.
    In: Proceedings of the Nanotech , June 18-21, Santa Clara, Ca, USA (NSTI-Nanotech), Vol. 2, New York, NY, 2012, pp. 598-601.
  • Oberndörfer J., Schrag G., Wachutka G.:
    Efficient model for predictive MEMS microphone design: Model derivation and experimental verification.
    In: Proceedings of EUROSENSORS XXVI, September 9-12, Krakow, Poland (EUROSENSORS), Amsterdam, 2012.
  • Weiß C., Wachutka G.:
    A Numerical "a-posteriori" -Method to Calculate Local Self-Heating in Power Devices After the Impact of a Cosmic Particle.
    In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 5-7 (SISPAD), Denver, CO, USA, 2012, pp. 35-38.
  • Weiß C., Wachutka G.:
    Destructive Effects in Silicon Power Devices After the Impact of a Cosmic Particle.
    In: Proceedings of the 11th International Seminar on Power Semiconductors, August 29-31, Prague, Czech Republic (ISPS), ibidem, 2012, pp. 49-52.
  • Weiß C., Härtl A., Hille F., Pfirsch F., Wachutka G.:
    Höhenstrahlunsresistenz von Silizium-Leistungsdioden.
    In: 41. Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, October 29-30, 2012, Freiburg, Germany, 2012.
  • Weiß C., Wachutka G., Härtl A., Hille F., Pfirsch F.:
    Predictive Physical Model of Cosmic-Radiation-Induced Failures of Power Devices.
    In: Proceedings of the 15th International Power Electronics and Motion Control Conference, EPE-PEMC 2012 ECCE Europe, Vol. Novi Sad, Serbia, 4-6 Sept. 2012, Novi Sad, 2012.

    2011  Top
  • Iannacci J., Faes A., Künzig T., Niessner M., Wachutka G.:
    Electromechanical and electromagnetic simulation of RF-MEMS complex networks based on compact modeling approach.
    In: Proceedings of TechConnect World NSTI Nanotech/Microtech 2011, June 13-16 (NSTI NANOTECH 2011), Vol. 2, Boston, MA, USA, 2011, pp. 591-594.
  • Iannacci J., Masotti D., Künzig T., Niessner M.:
    A Reconfigurable Impedance Matching Network Entirely Manufactured in RF-MEMS Technology.
    In: Proceedings of SPIE: Smart Sensors, Actuators, and MEMS V, April 18-20, Prague, Czech Republic (SPIE Microtechnologies), Vol. 8066, Bellingham, WA, USA, 2011, pp. 80660X-1-12.
  • Knipper U.:
    Untersuchungen zur Robustheit von IGBT-Chips im Lawinendurchbruch.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. und Schmitt-Landsiedel D., Vol. 39, , Shaker Verlag, Aachen, Germany, 2011, 96 pages.
  • Müller S.., Zahner T.., Singer F., Schrag G ., Wachutka G.:
    Evaluation of Thermal Transient Characterization Methodologies for High-Power LED Applications.
    In: Proceedings of the 17th International Workshop on Thermal Investigations of ICs and Systems, September 27-29 (THERMINIC 2011), Paris, France, 2011.
  • Niessner M., Iannacci J., Schrag G.:
    Mechanical Contact in System-level Models of Electrostatically Actuated RF-MEMS Switches: Experimental Analysis and Modeling.
    In: Proceedings of SPIE: Smart Sensors, Actuators, and MEMS V, April 18-20, Prague, Czech Republic (SPIE Microtechnologies), Vol. 8066, Bellingham, WA, USA, 2011, pp. 80660Y-1-9.
  • Niessner M., Schrag G., Iannacci J., Wachutka G.:
    COMSOL API based Toolbox for the Mixed-Level Modeling of Squeeze-Film Damping in MEMS: Simulation and Experimental Validation.
    In: Proceedings of the 5th Europeans Comsol Conference, October 26-28, Stuttgart, Germany (COMSOL CONFERENCE 2011), 2011, pp. CD-ROM,.
  • Niessner M., Schrag G., Iannacci J., Wachutka G.:
    Macromodel-Based Simulation and Measurement of the Dynamic Pull-in of Viscously Damped RF-MEMS Switches.
    In: Sensors and Actuators: A. Physical, Vol. 172 (1), 2011, pp. 269-279.
  • Niessner M., Schrag G., Iannacci J., Wachutka G.:
    Mixed-level modeling of squeeze film damping in MEMS: simulation and pressure-dependent experimental validation.
    In: Technical Digest of the 16th Int. Conference on Solid-State Sensors, Actuators and Microsystems, June 5-9 (TRANSDUCERS 2011), Beijing, China, 2011, pp. 1693-1698.
  • Schrag G., Niessner M., Wachutka G.:
    Reliable system-level models for electrostatically actuated devices under varying ambient conditions: Modeling and validation.
    In: Proceedings of the Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS, May 11-13, Aix-en-Provence, France (DTIP 2011), Grenoble, France, 2011, pp. 8-13.
  • Sipilä Pekka:
    Real-Time Magnetic Field Monitoring in Magnetic Resonance Imaging.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 40, , Shaker Verlag, Aachen, Germany, 2011.
  • Wachutka G.:
    Modellierung verteilter physikalischer Koppeleffekte in Leistungs-Bauelementen und Modulen.
    In: Bauelemente der Leistungselektronik und ihre Anwendung - 6. ETG-Fachtagung, Bad Nauheim, 13.-14. April, Berlin Offenbach, 2011, pp. 102-111.
  • Weiß C., Aschauer S., Wachutka G., Härtl A., Hille F., Pfirsch F.:
    Numerical Analysis of Cosmic Radiation-Induced Failures in Power Diodes.
    In: Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European, Vol. Helsinki, 12-16 Sept. 2011, Helsinki, 2011, pp. 355-358.
  • Weiß C., Aschauer S., Wachutka G., Härtl A., Hille F., Pfirsch F.:
    Numerische Untersuchungen zum Ausfall von Leistungsdioden aufgrund von Höhenstrahlung.
    In: 40. Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, October 24-25, 2011, Freiburg, Germany, 2011.

    2010  Top
  • Gerstenmaier Y. C., Wachutka G.:
    The Problem of Infinitely Cascaded Thermoelectric Converters and their Optimization.
    In: Proceedings of the International Workshop on Thermal Investigations of ICs and Systems, October 6-8 (THERMINIC 2010), Barcelona, Spain, 2010, pp. 133-138.
  • Herz M., Horsch D., Wachutka G., Lueth T., Richter M.:
    Design of ideal circular bending actuators for high performance micropumps.
    In: Sensors and Actuators A, Vol. 163 (1), 2010, pp. 231-239.
  • Iannacci J., Repchankova A., Faes A., Tazzoli A., Meneghesso G., Niessner M.:
    Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches.
    In: Proceedings of Eurosensors XXIV, September 5-8 (Eurosensors 2010), Linz, Austria, 2010, pp. CD-ROM.
  • Khalilyulin R., Schrag G., Wachutka G.:
    Calibration and Validation Procedure for Reliable and Predictive High-level Transducer Models suited for System-level Design.
    In: NSTI-Nanotech 2010, June 21-24, 2010, Anaheim, CA USA, Vol. Vol. 2, 2010, pp. 581-584.
  • Khalilyulin R., Steinhuber T., Schrag G., Wachutka G.:
    Hardware/Software Co-Simulation for the Rapid Prototyping of an Acceleration Sensor System with Force-Feedback Control.
    In: Proceedings of the 40th European Solid-State Device Research Conference, September 14-16 (ESSDERC 2010), Seville, Spain, 2010, pp. 186-189.
  • Khalilyulin R.,Steinhuber T.,Reutter T., Wachutka G.,Schrag G.:
    Modeling Approach for Full-System Design and Rapid Hardware Prototyping of Microelectromechanical Systems.
    In: Proceedings of the Ninth IEEE Sensors Conference 2010, Nov 1-4 (IEEE Sensors 2010), Kona, Hawaii, 2010, pp. 1405-1410.
  • Künzig T., Niessner M., Wachutka G., Schrag G., Hammer H.:
    The Effect of Thermoelastic Damping on the Total Q-Factor of State-of-the-Art MEMS Gyroscopes with Complex Beam-Like Suspensions.
    In: Proceedings of Eurosensors XXIV, September 5-8 (Eurosensors 2010), Linz, Austria, 2010, pp. CD-ROM.
  • Niessner M., Schrag G., Iannacci J., Wachutka G.:
    Validation of a Multi-Energy Domain Coupled Macromodel for Viscously Damped MEMS at Varying Pressure Conditions.
    In: Proc. of the 4th European Conference on Computational Mechanics. Solids, Structures and Coupled Problems in Engineering. May 16-21 (ECCM2010), Paris, France, 2010, pp. CD-ROM.
  • Niessner M., Iannacci J., Peller A., Schrag G., Wachutka G.:
    Macromodel-Based Simulation and Measurement of the Dynamic Pull-in of Viscously Damped RF-MEMS Switches.
    In: Proceedings of Eurosensors XXIV, September 5-8 (Eurosensors 2010), Linz, Austria, 2010, pp. CD-ROM.
  • Niessner M., Iannacci J., Schrag G., Wachutka G.:
    Experimental Analysis and Modeling of the Mechanical Impact during the Dynamic Pull-In of RF-MEMS Switches.
    In: Proceedings of the Int. Conf. on Advanced Semiconductor Devices and Microsystems, October 25-27 (ASDAM 2010), Smolenice, Slovakia, 2010, pp. 267-270.
  • Niessner M., Schrag G., Wachutka G., Iannacci J.:
    Modeling and fast simulation of RF-MEMS switches within standard IC design framework.
    In: Proceedings of the 15th International Conference on Simulation of Semiconductor Processes and Devices , September 6-8 (SISPAD 2010), Bolgna, Italy, 2010, pp. 317-320.
  • Reutter T., Schrag G.:
    Reliable Piezoelectric FEM-Simulations of MEMS Microphones: Basis for Intrinsic Stress Reduction.
    In: Proceedings of the Ninth IEEE Sensors Conference 2010, Nov 1-4 (IEEE SENSORS 2010), Kona, Hawaii, 2010, pp. 193-196.
  • Wachutka G., Böhm P.:
    Physics-Based Modeling of Electromagnetic Parasitic Effects in Interconnects and Busbars.
    In: Proceedings of the Int. Conf. on Advanced Semiconductor Devices and Microsystems, October 25-27 (ASDAM 2010), Smolenice, Slovakia, 2010, pp. 313-316.
  • Weiß C., Wachutka G.:
    Numerische Untersuchungen zur Stoßionisation bei extrem steilen Feldspitzen (Streamer-Modell).
    In: 39. Kolloquium Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, November 08-09, 2010, Freiburg, Germany, 2010.
  • Xiong L., Wachutka G., Pieper K.-W.:
    Modeling of self-heating effect of poly-resistors Modellierung der Selbsterwärmung von Polywiderständen.
    In: ITG-Fachbericht 221 - Tagungsband der 11. ITG/GMM-Fachtagung in Erfurt, 22.-23.03.2010 (ANALOG 2010), Berlin Offenbach, 2010.

    2009  Top
  • Fulde M., Heigl A., Wachutka G., Knoblinger G., Schmitt-Landsiedel D.:
    Complementary Multi-Gate Tunnelling FETs: Fabrication, Optimisation and Application Aspects.
    In: International Journal of Nanotechnology (IJNT), Vol. 6 (7/8), 2009, pp. 628-639.
  • Gerstenmaier Y.C., Kiffe W., Wachutka G.:
    Combination of Thermal Subsystems by Use of Rapid Circuit Transformation and Extended Two-Port Theory.
    In: Microelectronics Journal (Microelectronics J.), Vol. 40 (1), 2009, pp. 26-34.
  • Heigl A., Wachutka G.:
    Detailed Analysis of Quantum-Effects in Nanowire Tunneling Transistors with Different Channel-Profiles.
    In: Proceedings of the NSTI Nanotechnology Conference and Trade Show (NSTI Nanotech 2009), Vol. 1, Houston, TX, USA, 2009, pp. 590-593.
  • Heigl A., Schenk A., Wachutka G.:
    Correction to the Schenk Model of Band-to-Band Tunneling in Silicon Applied to the Simulation of Nanowire Tunneling Transistors.
    In: Proceedings of the 13th International Workshop on Computational Electronics (IWCE-13), Beijing, China, 2009, pp. 96-99.
  • Iannacci J.,Repchankova A., Macii D., Niessner M.:
    A Measurement Procedure of Technology-related Model Parameters for Enhanced RF-MEMS Design.
    In: Proceedings of the IEEE Advanced Methods for Uncertainty Estimation in Measurement International Workshop, July 6-7 (AMUEM 2009), Bucharest, Romania, 2009, pp. 44-49.
  • Khalilyulin R., Schrag G., Wachutka G.:
    Experimental calibration and validation of a micromechanical accelerometer model suited for system-level design.
    In: Proceedings of Eurosensors XXIII, September 6-9 (Eurosensors 2009), Lausanne, Switzerland, 2009, pp. 128-131.
  • Niessner M., Schrag G., Iannacci J., Wachutka G.:
    Experimentally Validated and Automatically Generated Multi-Energy Domain Coupled Model of a RF-MEMS Switch.
    In: Proceedings of the 10th. Int. Conf. on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, April 27-29 (EuroSimE 2009), Delft, The Netherlands, 2009, pp. 595-600.
  • Niessner M., Schrag G., Wachutka G., Iannacci J.:
    Verifizierung eines nichtlinearen Modells für einen gedämpften ohmschen HF-Schalter bei unterschiedlichen Druckbedingungen.
    In: Proceedings MikroSystemTechnik Kongress 2009, October 12-14 (MST 2009), Berlin, 2009, pp. CD-ROM.
  • Niessner M., Schrag G., Wachutka G., Iannacci J., Margesin B.:
    Automatically Generated and Experimentally Validated System-Level Model of a Microelectromechanical RF Switch.
    In: Proceedings of NSTI Nanotechnology Conference and Trade Show, May 3-7 (NSTI Nanotech 2009), Vol. 3, Houston, TX, USA, 2009, pp. 655-658.
  • Niessner M., Schrag G., Wachutka G., Iannacci J., Margesin B.:
    Automatisiert erstelltes und experimentell verifiziertes Mixed-Level-Modell für einen mikromechanischen HF-Schalter.
    In: 7. GI/GMM/ITG-Workshop Multi-Nature-Systems: Entwicklung von Systemen mit elektronischen und nichtelektronischen Komponenten, February 2 (MNS 2009), Ulm, Germany, 2009.
  • Niessner M., Schrag G., Wachutka G., Iannacci J., Reutter T., Mulatz H.:
    Non-linear model for the simulation of viscously damped RF-MEMS switches at varying ambient pressure conditions.
    In: Proceedings of Eurosensors XXIII, September 6-9 (Eurosensors 2009), Lausanne, Switzerland, 2009, pp. 618-621.
  • Pakar H., Schrag G., Wachutka G.:
    A Novel Low Input Voltage Driver Circuit For Piezoelectrically Driven Microactuators.
    In: Book of Abstracts of the Workshop on MicroMechanics Europe, September 20-22, 2009, Toulouse, France (MME 2009), 2009.
  • Reinelt N., Schmitt M., Willmeroth A., Kapels H., Wachutka G.:
    Increasing the Breakdown Capability of Superjunction Power MOSFETs at Increasing the Breakdown Capability of Superjunction Power MOSFETs at the Edge of the Active Region.
    In: Proceedings of the 13th International European Power Electronics Conference and Exhibition, September 8-10 (EPE 2009), Barcelona, Spain, 2009, pp. CD-ROM.
  • Repchankova A., Iannacci J., Niessner M.:
    Aspects of Mechanical Reliability for RF-MEMS Switches with Self-Recovery Mechanism to Counteract Stiction.
    In: Proceedings of the XXXVIII AIAS Association National Congress, September 9-11 (AIAS 2009), Turin, Italy, 2009, pp. 225-226.
  • Schrag G., Khalilyulin R., Wachukta G.:
    Virtuelles Prototyping "smarter" Sensorsysteme: Physikalisch basierte Modellierung am Beispiel eines mikromechanischen Gyroskops.
    In: Sensoren im Automobil III, Series: Haus der Technik Fachbuch, Eds.: Prof. Dr.-Ing. Ulrich Brill, Vol. 101, expert verlag, Renningen, 2009, pp. 184-208.
  • Schrag G., Niessner M., Khaliyulin R., Wachutka G.:
    Virtual Micromechatronics: Physically Consistent Efficient Multi-Energy Domain Modeling.
    In: Proc. of 3rd Int. Conf. on Automotive Power Electronics, March 25-26 (APE 2009), Paris, France, 2009.
  • Werber D., Wachutka G.:
    Neue Messergebnisse für SiC-Bauelemente aus dem Mirageexperiment.
    In: 38. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 30-31, 2009.
  • Werber D., Wachutka G.:
    Physical Modeling of SiC Devices Based on the Optical Characterization of their Internal Electrothermal Behavior.
    In: Proceedings of the International Semiconductor Device Research Symposium 2009 (ISDRS 2009), University of Maryland, USA, 2009.
  • Werber D., Aigner M., Wachutka G.:
    Optical Insights into the Internal Electronic and Thermal Behavir of 4H-SiC Bipolar Devices.
    In: Siliconcarbide and Related Materials 2009 (ICSCRM 2009), 2009.
  • Werber D., Wachutka G:
    Combined Model Validation Platform for the Temperature and Charge Carrier Distributions in 4H-SiC Bipolar Diodes Exploiting the Plasma- and Thermo-Optical Effects.
    In: Proceedings of the 3rd International Conference on Automotive Power Electronics, März 25-26 (APE 2009), Paris, France, 2009.
  • Werber D., Wachutka G.:
    Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes.
    In: Materials Science Forum, Vol. 615-617, 2009, pp. 267-270.
  • Werber D., Aigner M., Denoth D., Wittmann F., Wachutka G.:
    Investigation of the Internal Carrier Distribution in 4H-SiC pin-Diodes by Laser Absorption Experiments.
    In: Materials Science Forum, Vol. 600-603, 2009, pp. 493-496.
  • Zöpfl T., Klare S., Wachutka G., Schrag G.:
    Characterisation of the intrinsic stress in micromachined parylene membranes.
    In: Proceedings of SPIE: Smart Sensors, Actuators, and MEMS IV (SPIE Vol. 7362), Vol. 7362, Dresden, Germany, 2009, pp. 73621M-1-11.

    2008  Top
  • Bedyk W., Niessner M., Schrag G., Wachutka G., Margesin B., Faes A.:
    Automated extraction of multi-energy domain reduced-order models demonstrated on capacitive MEMS microphones.
    In: Sensors and Actuators A, Vol. 145-146, 2008, pp. 263-270.
  • Borthen P. Wachutka G.:
    Testing semiconductor devices at extremly high operating temperatures.
    In: Microelectronics Reliability, Vol. Vol 48 (issues 8-9), 2008, pp. 1440-1443.
  • Borthen P. Wachutka G.:
    Testing semiconductor devices at extremly high operating temperatures.
    In: Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis 2008, Sept. 9- Oct. 2, Maastricht, The Netherlands (ESREF 2008), 2008.
  • Borthen P., Terhorst M., Heinzerling G., Wachutka G.:
    Hochtemperaturmessungen mit kurzen Pulsen.
    In: 37. Kolloquium Halbleiterbauelemente und ihre systemtechnische Anwendung, Freiburg 27.-28.10.2008, 2008, pp. Vortrag 11.
  • Borthen P., Wachutka G.:
    Ein Meßplatz für die Untersuchung von Halbleiterbauelementen bei sehr hohen Umgebungstemperaturen.
    In: Tagungsband der 10. GMM/ITG-Fachtagung Entwurf von analogen Schaltungen mit CAE-Methoden, April 2-4 (ANALOG 08), Siegen, Germany, 2008, pp. 81-86.
  • Fulde M., Heigl A., Wirnshofer M., Arnim K.v., Nirschl T., Sterkel M., Knoblinger G., Hansch W., Wachutka G., Schmitt-Landsiedel D.:
    Fabrication, Optimization and Application of Complementary Multiple-Gate Tunnelings FETs.
    In: Proceedings of the 2nd IEEE International Nanoelectronics Conference (INEC 2008), Shanghai, China, 2008, pp. 579-584.
  • Gawlina Y., Borucki L., Georgakos G., Wachutka G.:
    Strahlungsbedingte Ausfälle des Logikteils von HV-ICs in CMOS-Technologie.
    In: 37. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 27-28, 2008.
  • Gerstenmaier Y.C., Wachutka G.:
    The Minimal Set of Parameters for Exact Dynamic Thermal Models.
    In: 14th International Workshop on Thermal Investigations of ICs and Systems, September 24-26 (THERMINIC 2008), Rome, Italy, 2008, pp. 70-75.
  • Heigl A., Wachutka G.:
    Quantum-Corrected Simulation of Complementary Nanowire Tunneling Transistors of 5 nm Gate-Length.
    In: Proceedings of the Int. Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2008), Bratislava, Slovakia, 2008, pp. 115-118.
  • Heigl A., Wachutka G.:
    Study on the Optimized Design of Nanowire Tunneling Transistors Including Quantum Effects.
    In: Proceedings of the Int. Conf. on the Simulation of Semiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 2008, pp. 225-228.
  • Khalilyulin R., Schrag G., Wachutka G.:
    Physically-Based High-Level System Model of a MEMS-Gyroscope for the Efficient Design of Control Algorithms.
    In: Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Vol. 3, June 1-5 (NSTI Nanotech 2008), Boston, MA USA, 2008, pp. 505-508.
  • Knipper U.., Pfirsch F.., Raker T.., Niedermayr J.., Wachutka G.:
    Zerstörung im aktiven Teil eines IGBT-Chips ausgelöst durch Avalanche-Durchbruch am Randabschluss.
    In: 37. Kolloquium Halbleiterbauelemente und ihre systemtechnische Anwendung, Freiburg 27.-28.10.2008, 2008, pp. Vortrag 06.
  • Knipper U., Wachutka G., Pfirsch F., Raker T., Niedermeyr J.:
    Time-Periodic Avalanche Breakdown at the Edge Termination of Power Devices.
    In: Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on, Orlando,FL,USA, 2008, pp. 307-310.
  • Niessner M., Schrag G., Wachutka G.:
    Reduced-Order Modeling and Coupled Multi-Energy Domain Simulation of Damped Highly Perforated Microstructures.
    In: Proceedings of the 8th Congress on Computational Mechanics and the 5th European Congress on Computational Mechanics in Applied Sciences and Engineering, June 30 - July 4 (WCCM8/ECCOMAS 2008), Venice, Italy, 2008.
  • Permthammasin K.:
    Optimierung der elektrischen Eigenschaften von lateralen Superjunction-Bauelementen.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 30, , Shaker Verlag, Aachen, 2008, 197 pages.
  • Schrag G., Khaliliyulin R., Niessner M., Wachutka G.:
    Hierarchical Modeling Approach for Full-System Design and control of Microelectromechanical Systems.
    In: Proc. of Eurosensors XXII, September 7-10, Dresden, Germany, 2008, pp. 528-531.
  • Sipilä P., Lechner S., Lange D., Greding S., Wachutka G., Wiesinger F.:
    A Magnetic Field Monitoring Add-on Toolkit Based on Transmit-Receive NMR Probes.
    In: Proc. of the 16th Scientific Meeting of the Intern. Soceity of Magnetic Resonance in Medicine (ISMRM 2008), Toronto,Canada, 2008, pp. 680-680.
  • Wachtuka G.:
    Virtual Experiments with Power Devices Using Predictive Simulation.
    In: 9th International Seminar on Power Semiconductors, August 27-29 (ISPS 2008), Prague, Czech Republic, 2008, pp. 21-24.
  • Wachutka G.:
    Virtual Prototyping of Microdevices and Microsystems.
    In: Proceedings of the Distributed Intelligent Systems and Technologies Workshop,A. Lehman,V.P. Shkodyrev (eds.),St. Petersburg State Polytechnical University 2008, St. Petersburg,Russia, 2008, pp. 155-162.
  • Werber D., Wachutka G.:
    Charakterisierung von 4H-SiC bipolaren Leistungsbauelementen durch Laserabsorption und Laserdeflexion.
    In: 37. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 27-28, 2008.
  • Werber D., Wachutka G.:
    Interpretation of Laser Absorption Measurements on 4H-SiC Bipolar Diodes by Numerical Simulation.
    In: Simulation of Semiconductor Processes and Devices 2008 (SISPAD 2008), Hakone, Japan, 2008, pp. 89-92.
  • Werber D., Wachutka G.:
    Laser Deflection Measurements for the Determination of Temperature and Charge Carrier Distributions in 4H-SiC Power Diodes.
    In: Silicon Carbide and Related Materials 2008 (ECSCRM 2008), Barcelona, Spain, 2008, pp. 267-270.
  • Werber D., Wachutka G.:
    Time-resolved Investigation on the Internal Carrier Distribution in 4H-SiC pin Diodes by Laser Absorption Experiments.
    In: Proceedings of the 9th International Seminar on Power Semiconductors, August 27-29 (ISPS 2008), Prag, Czech Republic, 2008, pp. 41-47.
  • Zöpfl T., Wittmann F., Schrag G., Wachutka G.:
    High-Fidelity 3D FEM Simulation Model for Stress Reduction in MEMS Microphones.
    In: Proceedings of Eurosensors XXII, Sep 7-10 (Eurosensors XXII), Dresden, Germany, 2008, pp. 68-71.
  • Zöpfl T., Bedyk W., Wittmann F., Schrag G., Wachutka G., Schicke M.:
    FEM Simulation and Optimization of the Electromechanical Behaviour of a Variable Superconducting Niobium Capacitor.
    In: Sensors and Materials, Vol. 20 (2), 2008, pp. 71-86.

    2007  Top
  • Bedyk W., Niessner M., Schrag G., Wachutka G., Margesin B., Faes A.:
    Automated Extraction of Multi-Energy Domain Reduced-Order Models Demonstrated on Capacitive MEMS Microphones.
    In: Proc. of the 14th Int. Conference on Solid-State Sensors and Transducers, June 10-14 (Transducers 2007), Lyon, France, 2007, pp. 1263-1266.
  • Borthen P., Wachutka G.:
    A Modular High Temperature Measurement Set-Up for Semiconductor Device Characterization.
    In: Proc. International Workshop on Thermal Investigations of ICs and Systems, September 17-19 (THERMINIC 2007), 2007, pp. 189-194.
  • Borthen P., Wachutka G.:
    Modularer Hochtemperatur-Meßplatz zur elektrothermischen Charakterisierung von Leistungsbauelementen.
    In: 36. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 29-30, Freiburg,Deutschland, 2007.
  • Gerstenmaier Y.C., Wachutka G.:
    Efficiency of Thermionic and Thermoelectric Converters.
    In: Proceedings of the 7th World Conference on Thermophotovoltaic Generation of Electricity - TPV7, El Escorial, Spain, September 25-27, 2006 (AIP Conference Proceedings, vol. 890), Eds.: Algora, C.; Corregidor, V., Melville, New York, 2007, pp. 349-359.
  • Gerstenmaier Y.C., Kiffe W., Wachutka G.:
    Combination of thermal subsystems modeled by rapid circuit transformation.
    In: 13th International Workshop on Thermal Investigations of ICs and Systems, September 17-19 (THERMINIC 2007), Budapest, Hungary, 2007, pp. 115-120.
  • Grabinski W., Wachutka G.:
    MOS-AK: Open Compact Modeling Forum (Invited IWCW Paper).
    In: Proc. 4th International Workshop on Compact Modeling, January 23 (IWCM 2007), Yokohama,Japan, 2007, pp. 1-11.
  • Heigl A., Wachutka G.:
    Optimization of Vertical Tunneling Field-Effect Transistors.
    In: Proceedings of the 8th Int. Conf. on the Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 2007, pp. 133-136.
  • Heigl A., Wachutka G.:
    Physics-based Modelling of Quantum Transport in Nanostructured Devices.
    In: 3rd FORNEL Workshop on Nanoelectronics, Würzburg, Germany, 2007.
  • Heigl A., Wachutka G.:
    Simulation of Quantum-Ballistic Nanoswitches.
    In: Journal of Computational Electronics (J Comput Electron), Vol. 6 (1-3), 2007, pp. 97-100.
  • Heigl A., Wachutka G.:
    Simulation of Silicon Nanowire Tunneling Field-Effect Transistors Including Quantum Effects.
    In: Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2007), College Park, MD, USA, 2007, pp. 1-2.
  • Khalilyulin R., Salwetter F., Wachutka G.:
    Coupled Package-Device Modeling of an Angular Rate gyroscope.
    In: Book of Abstracts of the 18th Workshop on MicroMechanics Europe, September 16-18 (MME2007), Guimaraes,Portugal, 2007, pp. 297-300.
  • Knipper U., Pfirsch F., Raker T., Niedermeyr J., Wachtuka G.:
    Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures.
    In: Simulation of Semiconductor Processes and Devices, September 25-27 (SISPAD 2007), Wien,Austria, 2007, pp. 189-192.
  • Knipper.U., Pfirsch F., Raker T., Niedermeyr J., Wachutka G.:
    Untersuchungen zum zeitabhängigen Durchbruchverhalten von IGBT-Randabschlüssen.
    In: 36. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 29-30, Freiburg im Breisgau,Germany, 2007.
  • Niessner M., Schrag G., Wachutka G.:
    Generation of Multi-Energy Domain Macromodels of Highly Perforated and Deformable Microstructures Exposed to Squeeze Film Damping.
    In: Tagungsband Mikrosystemtechnik Kongress 2007 (MST 2007), Dresden, 2007, pp. 175-178.
  • Niessner M., Schrag G., Wachutka G.:
    Extraktion von physikalisch basierten mixed-level Modellen für Mikrosysteme.
    In: Tagungsband Fachgruppentreffen der ASIM/GM Fachgruppen (ASIM 2007), Bremen, Deutschland, 2007, pp. 24-25.
  • Pobering S., Ebermayer S., Schwesinger N.:
    Piezoelektrischer Bimorphgenerator - Entwurf, Simulation, Messergebnisse.
    In: Tagungsband Mikrosystemtechnik Kongress 2007 (MST 2007), Dresden, Germany, 2007, pp. 345-348.
  • Sattler R.:
    Physikalisch basierte Mixed-Level Modellierung von gedämpften elektromechanischen Systemen.
    Series: Augwählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 28, , Shaker Verlag, Aachen, 2007, 181 pages.
  • Schicke M., Navarrini A., Ferrari P., Zopfl T., Wittmann F., Bedyk W., Schrag G., Schuster K.-F.:
    Niobium SupraMEMS for Reconfigurable Millimeter Wave Filters.
    In: IEEE Transactions on Applied Superconductivity, Vol. 17 (2), 2007, pp. 910-913.
  • Sipilä P., Lange D., Lechner S., Loew W., Gross P., Bailer M., Wachutka G., Wiesinger F.:
    Robust Susceptibility-Matched NMR Probes for Compensation of Gradient Field Imperfections in Magnetic Resonance Imaging.
    In: Proc. of the 14th Int. Conference on Solid-State Sensors and Transducers, June 10-14 (TRANSDUCER 2007), Lyon, France, 2007, pp. 2381-2384.
  • Sipilä P., Lange D., Lechner S., Loew W., Gross P., Baller M., Wachutka.G.:
    Simple and Robust Design for Suscebtibility-Matched NMR Magnetic Field Monitoring Probes.
    In: Proc. of the 15th Scientific Meeting of the International Society for Magnetic Resonance in Medicine (ISMRM 2007), Berlin, Germany, 2007, pp. 3261-3261.
  • Werber D., Wachutka G.:
    Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes.
    In: Simulation of Semiconductor Processes and Devices 2007 (SISPAD 2007), Wien,Austria, 2007, pp. 185-188.
  • Werber D., Aigner M., Denoth D., Wittmann F., Wachtuka G.:
    Investigation on the Internal Carrier Distribution in 4H-SiC PIN Diodes by Laser Absorption Experiments.
    In: Silicon Carbide and Related Materials 2007 (ICSCRM 2007), Otsu, Japan, 2007, pp. 493-496.
  • Werber D., Borthen P., Wachutka G.:
    Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation.
    In: Materials Science Forum, Vol. 556-557, 2007, pp. 905-908.
  • Werber D., Wachutka G., Wittmann F.:
    Analyse der Ladungsträgerverteilung in 4H-SiC pin-Dioden durch optische Messung und Baulementesimulation.
    In: 36. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 29-30, Freiburg, Deutschland, 2007.

    2006  Top
  • Borthen P., Wachutka G.:
    Characterization and Simulation of Silicon Power Devices up to very high Temperatures.
    In: Proc. Int. Conf. Mixed Design of Integrated Circuits and Systems, Jun 22-24 (MIXDES 2006), 2006, pp. 612-614.
  • Borthen P., Wachutka G.:
    Hochtemperaturcharakterisierung und vergleichende Simulationen von Silizium-Leistungshalbleitern.
    In: 35. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 30-31, Freiburg, Breisgau, 2006.
  • Castellazzi A., Gerstenmaier Y.C., Kraus R., WachutkaG.:
    Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet.
    In: IEEE Transactions on Power Electronics (IEEE Trans. PEL), Vol. 21 (3), 2006, pp. 603-612.
  • Castellazzi A., Honsberg-Riedl M., WachutkaG.:
    Thermal characterisation of power devices during transient operation.
    In: Microelectronics Journal, Vol. 37 (2), 2006, pp. 145-151.
  • Castellazzi A., Wachutka G.:
    Low-voltage Power MOSFETs used as dissipative elements: electrothermal analysis and characterization.
    In: Proc. 37th IEEE Power Electronics Specialists Conf., June 18-22 (PESC 2006), Jeju, South Korea, 2006, pp. 865-871.
  • Gerstenmaier Y. C., Wachutka G.:
    Thermoelectric and Thermionic Micro-Converters.
    In: Proceeding of the 36th European Solid-State Device Research Conference, September 18-22 (ESSDERC 2006), Montreux, Switzerland, 2006, pp. 431-434.
  • Gerstenmaier Y.C., Wachutka G.:
    Efficiency of Thermionic and Thermoelectric Converters.
    In: 7th World Conference on Thermophotovoltaic Generation of Electricity (TPV 7), El Escorial, Spain, 2006.
  • Gerstenmaier Y.C., Wachutka G.:
    Thermionische Micro-Gap Konverter - Leistungsbauelemente der Zukunft?.
    In: 35. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 30-31 (35. Freiburger HL-Bauelemente Kolloquium), Freiburg im Breisgau, Germany, 2006, pp. CD-ROM.
  • Gerstenmaier Y.C., Castellazzi A., Wachutka G.K.M.:
    Electrothermal simulation of multichip-modules with novel transient thermal model and time-dependent boundary conditions.
    In: IEEE Transactions on Power Electronics (IEEE Trans. PEL), Vol. 21 (1), 2006, pp. 45-55.
  • Heigl A., Wachutka G.:
    Simulation of Advanced Tunneling Devices.
    In: Proceedings of the Int. Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2006), Bratislava, Slovakia, 2006, pp. 121-124.
  • Heigl A., Wachutka G.:
    Simulation of Advances Tunneling Devices.
    In: Technical Digest of the IEEE EDS Workshop on Advanced Electron Devices (AED 2006), Duisburg, Germany, 2006.
  • Heigl A., Wachutka G.:
    Simulation of Quantum-Ballistic Nanoswitches.
    In: Proceedings of the 11th International Workshop on Computational Electronics (IWCE-11), Vienna, Austria, 2006, pp. 191-192.
  • Horn A.:
    Modellierung und Simualtion orientierungsabhängiger Atzprozesse in Silizium.
    Series: Augwählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 20, , Shaker Verlag, Aachen, Germany, 2006, 174 pages.
  • Horn A., Wachutka G.:
    A Realistic Step Flow Model for the Predictive Simulation of Orientation-Dependent Wet Etching of Silicon: Application to Complex MEMS Structures.
    In: 5th Int. Workshop on Physical Chemistry of Wet Etching of Semiconductors, June 19-21 (PCWES 2006), Saarbrücken, Germany, 2006, pp. 32-33.
  • Khalilyulin R., Hauck T., Wachutka G.:
    Adaptive Control for Reducing the Effect of Damping on the Output Signal of Microgyroscopes.
    In: Proceedings of NSTI Nanotechnology Conference and Trade Show, May 3-7 (NSTI Nanotech 2009), Vol. 3, Boston, MA, USA, 2006, pp. 562-565.
  • Khalilyulin R., Hauck T., Wachutka G.:
    Adaptive Control for Reducing the Effect of Damping on the Output Signal of Microgyroscopes.
    In: 20th Eur. Conf. on Solid-State Transducers, September 17-20 (EUROSENSORS 2006), Göteborg, Sweden, 2006, pp. 100-101.
  • Knipper U., Wachutka G., Pfirsch F., Raker T.:
    Numerical Analysis of Destruction Mechanisms of NPT- and FS-IGBTs in Forward Blocking Mode.
    In: International Conference on Simulation of Semiconductor Processes and Devices, September 6-8 (SISPAD 2006), 2006, pp. 275-278.
  • Knipper U., Wachutka G., Pfirsch F., Raker T.:
    Untersuchungen zum Zerstörungsmechanismus von NPT- und FS-IGBTs im Sperrzustand.
    In: 35. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 30-31, Freiburg, Breisgau, 2006.
  • Niessner M., Bedyk W., Schrag G., Wachutka G., Margesin B., Faes A.:
    Reduced-order modeling of capacitive MEMS microphones using mixed-level simulation.
    In: Proc. of Int. Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2006), 2006, pp. 283-286.
  • Niessner M., Schrag G., Wachutka G.:
    Extraction of Physically Based High-Level Models for Rapid Prototyping of MEMS Devices and Control Circuitry.
    In: Proceedings of the 5th IEEE Conf. on Sensors, October 22-25 (Sensors 2006), Daegu, Korea, 2006, pp. 915-918.
  • Permthammasin K., Wachutka G., Schmitt M., Kapels H.:
    Dynamic Characteristics of Novel Super-Junction LDMOS Switches under Charge Imbalance Conditions.
    In: 25th International Conference on Microelectronics, May 14-17 (MIEL 2006), Nis, Serbia and Montenegro, 2006, pp. 187-190.
  • Permthammasin K., Wachutka G., Schmitt M., Kapels H.:
    New 600V Lateral Superjunction Power MOSFETs Based on Embedded Non-Uniform Column Structure.
    In: Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference onOcotber 16-18 (ASDAM 2006), Smolenice, Slovakia, 2006, pp. 263-266.
  • Ramminger S., Wachutka G.:
    Predicting the Crack Progression in PbSnAg-Solder Under Cyclic Loading.
    In: 4th Int. Conf. on Integrated Power Systems, June 7-9 (CIPS 2006), Naples, Italy, 2006, pp. 75-80.
  • Schrag G., Niessner M.:
    Extraction of Physically-based System-level Models for Rapid Prototyping of MEMS.
    In: Proc. of 24th CADFEM User Meeting, Stuttgart, Deutschland, 2006.
  • Wachutka G.:
    Multi-Energy Domain Modeling of Microdevices: Virtual Prototyping by Predictive Simulation.
    In: 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, April 24-26 (EUROSIME 2006), Como, Italy, 2006, pp. 758-763.
  • Wachutka G.:
    Recent Developments in Microsystem- and Nanodevice-TCAD.
    In: International Conference on Advanced Semiconductor Devices and Microsystems, October 16-18 (ASDAM 2006), Smolenice, Slovakia, 2006, pp. 257-258.
  • Wachutka G.:
    Virtual Prototyping of Power Modules by Predictive Multi-Energy Domain Simulation.
    In: 4th Int. Conf. on Integrated Power Systems, June 7-9 (CIPS 2006), Naples, Italy, 2006.
  • Wachutka G., Gerstenmaier Y.C.:
    Thermoelectric and thermionic microgenerators: chances, challenges and limitations.
    In: Proceedings of the International Conference Mixed Design of Integrated Circuits and System, June 22-24 (MIXDES 2006), Gdynia, Poland, 2006, pp. 48-51.
  • Wachutka G., Gerstenmaier Y.C.:
    Thermoelectric and Thermionic Microgenerators: Potentials and Limitations for Energy Harvesting.
    In: 6th International Environmental Forum for Baltic region countries, June 27-29 (ECOBALTICA-2006), St. Petersburg, Russia, 2006.
  • Werber D., Borthen P., Wachutka G.:
    Behaviour of 4H-SiC pin Diodes Studied by Numerical Device Simulation.
    In: Silicon Carbide and Related Materials 2006 (ECSCRM 2006), Newcastle upon Tyne,U.K., 2006, pp. 905-908.
  • Werber D., Borthen P., Wachutka G.:
    Numerische Analyse des temperaturabhängigen Vorwärtsverhaltens von hochsperrenden 4H-SiC pin-Dioden mit Hilfe kalibrierter Bauelementesimulation.
    In: 35. Kolloquium Halbleiterleistungsbauelemente und ihre systemtechnische Anwendung, Oktober 30-31, Freiburg, Deutschland, 2006.
  • Zöpfl T., Bedyk W. Wittmann F., Schrag G..,Wachutka G., Schicke M.:
    FEM-Simulation and Optimization of the Electromechanical Behavior of a Variable Superconducting Niobium Capacitor.
    In: Technical Digest of the 17th MicroMechanics Europe Workshop 2006, Sep. 3-5 (MME2006), Southampton, UK, 2006, pp. 225-228.

    2005  Top
  • Bedyk W., Schrag G., Niessner M., Wachutka G.:
    Physically Based Mixed-Level Model of a Micromachined Capacitive Microphone.
    In: Proc. of 16th Workshop on Micromachining, Micromechanics and Microsystems, September 4-6 (MME 2005), Göteborg, Sweden, 2005, pp. 140-143.
  • Castellazzi A., Wachutka G., Honsberg-Riedl M.:
    Temperature Measurements on Smart Power ICs During Pulsed Operation.
    In: Proceedings of the 12th International Conference on Mixed Design of Integrated Circuits and Systems, June 22-25 (MIXDES 2005), Krakov, Poland, 2005, pp. 255-260.
  • Gerstenmaier Y.C., Wachutka G.:
    Thermionic Refrigeration with Planar and Nonplanar Electrodes- Chances and Limits.
    In: 11th International Workshop on Thermal Investigations of ICS and Systems, September 28-30 (THERMINIC 2005), Belgirate, Italy, 2005, pp. 270-277.
  • Gerstenmaier Y.C., Wachutka G.K.M.:
    Transient temperature fields with general nonlinear boundary conditions in electronic systems.
    In: IEEE Transactions on Components and Packaging Technologies, Vol. 28 (1), 2005, pp. 23-33.
  • Handtmann M.:
    Dynamische Regelung mikroelektromechanischer Systeme (MEMS) mit Hilfe kapazitiver Signalwandlung und Kraftrückkopplung.
    Series: Augwählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 14, , Shaker Verlag, Aachen, Germany, 2005, 220 pages.
  • Kaindl W.:
    Modellierung höhenstrahlungsinduzierter Ausfälle in Halbleiterleistungsbauelementen.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 19, , Shaker Verlag, Aachen, Germany, 2005, 150 pages.
  • Kaindl W., Sölkner G., Schulze H.-J., Wachutka G.:
    Modeling of the Cosmic Radiation-Induced Failure Mechanism in High Power Devices.
    In: Proceedings of NSTI Nanotechnology Conference and Trade Show,, May 8-12 (NSTI Nanotech 2009), Vol. 3, 2005, pp. 632-635.
  • Kaindl W., Sölkner G., Schulze H.J., Wachutka G.:
    Cosmic radiation-induced failure mechanism of high voltage IGBT.
    In: Proceedings 17th International Symposium on Power Semiconductor Devices and ICs, May 23-26 (ISPSD 2005), Santa Barbara, CA, USA, 2005, pp. 199-202.
  • König E.-R.:
    Modellierung und Simulation elektromechanischer Instabilitäten bei Mikrobauteilen.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 18, , Shaker Verlag, Aachen, Germany, 2005, 178 pages.
  • Permthammasin K., Wachutka G., Schmitt M., Kapels H.:
    Performance Analysis of Novel 600V Super-Junction Power LDMOS Transistors with Embedded P-Type Round Pillars.
    In: International Conference on Simulation of Semiconductor Processes and Devices, September 1-3 (SISPAD 2005), Tokyo, Japan, 2005, pp. 179-182.
  • Pobering S., Schwesinger N.:
    Device for harvesting hydropower with piezoelectric bimorph cantilevers.
    In: Proceedings of 5th. International EUSPEN Conference, May 8-11, Montpelliers, France, 2005, pp. 283-286.
  • Pobering S., Schwesinger N.:
    Generator zur Erzeugung elektrischer Energie mithilfe piezoelektrischer Bimorphwandler.
    In: Tagungsband 7. Chemnitzer Fachtagung Mikromechanik und Mikroelektronik, October 26-27, Chemnitz, Germany, 2005, pp. 11-15.
  • Schmitt M.:
    Optimierung dynamischer elektrischer Eigenschaften von Kompensationsbauelementen.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 17, , Shaker Verlag, Aachen, Germany, 2005, 155 pages.
  • Schrag G.:
    Mixed-Level Coupled-Domain Macromodels for Predictive Microsystem Simulation.
    In: Proc. of AMICON Workshop on Design and Modeling Methods for RF MEMS, Montreux, Switzerland, 2005, pp. CD-ROM.
  • Schrag G., Miller B., Hauck T., Wachutka G.:
    Coupled-Domain Dynamical Full System Modeling of a Capacitive Acceleration Sensor Including Viscous Damping.
    In: Proc. of EUROSENSORS XIX Conference, September 11-14 (EUROSENSORS 2005), Barcelona, Spain, 2005, pp. TP42.
  • Wachutka G.:
    Physics-Based Macromodeling of Microdevices and Microsystems.
    In: Proc. Int. Conf. Mixed Design of Integrated Circuits and Systems, June 22-25 (MIXDES 2005), Krakov,Poland, 2005, pp. 999-1004.
  • Wachutka G.:
    Virtuelles Prototyping von Mikrobauteilen und Mikrosystemen durch prädiktive Simulation.
    In: Proceedings FEMLAB Konferenz, November 2-4, Frankfurt a.M., Germany, 2005, pp. 26-32.
  • Wachutka G., Heigl A.:
    Modellierung Elektronischer Bauelemente in Nanodimensionen.
    In: 1st FORNEL Workshop on Nanoelectronics, Munich, Germany, 2005.

    2004  Top
  • Bogdanov S., Riedl X., Schwesinger N.:
    Active New Microvalve Based on Phase Change Effect.
    In: Proceedings of the 2004 International Conference on MEMS, NANO and Smart Systems, August 25-27 (ICMEMS 2004), Banff, Alberta, Canada, 2004, pp. 578-582.
  • Bogdanov S., Riedl X., Schwesinger N.:
    Active New Microvalve Based on Phase Change Effect.
    In: 9th International Conference on New Atuators, June 14-16 (ACTUATOR 2004), Bremen, Germany, 2004, pp. 549-552.
  • Bogdanov S., Riedl X., Schwesinger N.:
    Active New Microvalve Based on Phase Change Effect.
    In: Digest of Techical Papers of the 18th European Conference on Solid-State Sensors - EUROSENSORS XVII, September 12-15 (EUROSENSORS 2004), Rome,Italy, 2004, pp. 570-571.
  • Böhm P., Wachutka G.:
    Numerical analysis tool for transient skin effect problems.
    In: 35th Annual Power Electronics Specialists Conference, June 20-25 (PESC 2004), Vol. 2, Aachen, Germany, 2004, pp. 880-884.
  • Böhm P., Mardal K.-A., Wachutka G.:
    Application of the Mixed Finite element Method to Transient Skin Effect Problems.
    In: Proc. 5th International Workshop on Scientific Computing in Electrical Engineering, September 5-9 (SCEE 2004), Caop Di Orlando, Italy, 2004, pp. 67-69.
  • Böhm P., Bruaset A.M., Langtangen H.P., Mardal K.-A., Wachutka G.:
    Diffpack Implementation of Edge-Based Non-Standard Finite element Methods.
    In: Research Report Simula 2004, Vol. 11, 2004, pp. 1-26.
  • Castellazzi A., Honsberg-Riedl M., Wachutka G.:
    Fast Transient Thermal Characterisation of Power Devices.
    In: International Workshop on Thermal Investigations of ICS and Systems, September 29-Octomber 1 (THERMINIC 2004), Sophia Antipolis, France, 2004, pp. 157-162.
  • Castellazzi A., Schwarzbauer H., Schmitt-Landsiedel D.:
    Analysis of PowerMOSFET chips in thermal instability.
    In: Microelectronics reliability (special issue), Vol. 44, 2004, pp. 1419-1424.
  • Gerstenmaier Y.C., Wachutka G.K.M.:
    Efficient calculation of transient temperature fields responding to fast changing heatsources over long duration in power electronic systems.
    In: IEEE Transactions on Components and Packaging Technologies, Vol. 27 (1), 2004, pp. 104-111.
  • Gerstenmaier Y.C., Castellazzi A., Wachutka G.:
    Electro-Thermal Simulation of Multi-Chip-Modules with Novel Transient Thermal Model.
    In: 10th International Workshop on Thermal Investigations of ICs and Systems, Sept. 29 - Oct. 1. (THERMINIC 2004), Sophia Antipolis, France, 2004, pp. 329-334.
  • Hoffmann R., Wachutka G.:
    Many-Body Toner Simulation Using Parallel Hierarchical Tree Code.
    In: 6th World Congress on Computational Mechanics, September 5-10 (WCCM6 / APCOM 2004), Beijing, China, 2004.
  • Hoffmann, R.,:
    Modeling and Simulation of an Electrostatic Image Transfer.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 12, , Shaker Verlag, Aachen, Germany, 2004, 137 pages.
  • Horn A., Wachutka G.:
    Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching.
    In: International Conference on Simulation Processes and Devices, September 2-4 (SISPAD 2004), München,Germany, 2004, pp. 133-136.
  • Icaza Deckelmann A.; Wachutka G., Krumey J.; Hirler F.:
    Simulation of the failure mechanism of power DMOS transistors under avalanche stress.
    In: International Conference on Simulation Processes and Devices, September 2-4 (SISPAD 2004), München, Germany, 2004, pp. 215-218.
  • Kaindl W., Solkner G., Becker H.W., Meijer J., Schulze H.J., Wachutka G.:
    Physically based simulation of strong charge multiplication events in power devices triggered by incident ions.
    In: Proceedings The 16th International Symposium on Power Semiconductor Devices and ICs, May 24-27 (ISPSD 2004), Kitakyushu, Japan, 2004, pp. 257-260.
  • König E.-R., Wachutka G.:
    Multi-parameter homotopy for the numerical analysis of MEMS.
    In: Sensors and Actuators A: Physical, Vol. 110 (1-3), 2004, pp. 39-51.
  • Pobering S.., Schwesinger N.:
    A Novel Hydropower Harvesting Device.
    In: Digest of Technical Papers of the18th European Conference on Solid-State Sensors - EUROSENSORS XVIII, September 12-15 (EUROSENSORS 2004), Rome,Italy, 2004, pp. 251-252.
  • Pobering S., Schwesinger N.:
    A Novel Hydropower Harvesting Device.
    In: International Conference on MEMS, NANO and Smart Systems, August 25-28 (ICMEMS 2004), Banff, Alberta, Canada, 2004, pp. 480-485.
  • Racko J., Kudela P., Donoval D., Wachtuka G.:
    Modeling and Simulation of Combined Thermionic Emission-Tunneling Current through Interfacial Isolation Layer.
    In: International Conference on Simulation Processes and Devices, September 2-4 (SISPAD 2004), München,Germany, 2004, pp. 283-286.
  • Sattler R., Wachutka G.:
    analytical Compact Models For Squeeze-Film Damping.
    In: Design, Test, Integration and Packaging of MEMS/MOEMS, May 12-14 (DTIP 2004), Montreux, Switzerland, 2004, pp. 377-382.
  • Sattler R., Wachutka G.:
    Compact Models for Squeeze-Film Damping in the Slip Flow Regime.
    In: Proceedings of NSTI Nanotechnology Conference and Trade Show, March 7-11 (NSTI Nanotech 2004), Boston, MA, USA, 2004, pp. 243-246.
  • Schrag G., Wachutka G.:
    Accurate system-level damping model for highly perforated micromechanical devices.
    In: Sensors and Actuators A, Vol. 111 (2-3), 2004, pp. 222-228.
  • Strasser M., Aigner R., Lauterbach C., Sturm T. F., Franosch M., Wachutka G.:
    Micromachined CMOS thermoelectric generators as on-chip power supply.
    In: Sensors and Actuators A: Physical, Vol. 114 (2-3), 2004, pp. 362-370.
  • Strasser, M.,:
    Entwicklung und Charakterisierung mikrostrukturierter thermoelektrischer Generatoren in Silizium-Halbleitertechnologie.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 11, , Shaker Verlag, Aachen, Germany, 2004, 129 pages.
  • Stubenrauch M., Schwesinger N.:
    Microcombustion system in MEMS technology.
    In: Digest of Technical Papers of the 18th European Conference on Solid-State Sensors - EUROSENSORS XVIII, September 12-15 (EUROSENSORS 2004), Rome, Italy, 2004, pp. 588-589.
  • Sölkner G., Kaindl W., Schulze H.-J., Wachutka G.:
    Reliability of power electronic devices against cosmic radiation-induced failure.
    In: Microelectronics Reliability (special issue), Vol. 44, 2004, pp. 1399-1406.
  • Thalhammer R.K., Wachutka G.K.M.:
    Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices.
    In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 23 (1), 2004, pp. 60-70.
  • Wachutka G., Schrag G., Sattler R.:
    Predictive simulation of microdevices and microsystems: The basis of virtual prototyping.
    In: 24th International Conference on Microelectronics, May 16-19 (MIEL 2004), Nis, Serbia and Montenegro, 2004, pp. 71-78.

    2003  Top
  • Gerstenmaier Y.C., Wachutka G.:
    Efficient Calculation of Transient Temperature Fields with General Boundary Conditions in Electronic Systems.
    In: Proceedings of the 10th International Conference Mixed Design of Integrated Circuits and Systems, June 26-28 (MIXDES 2003), Lodz, Poland, 2003, pp. 313-318.
  • Gerstenmaier Y.C., Wachutka G.:
    Heat Conduction with Non-Linear Radiative and Convective Boundary Conditions Treated with Greens Function Method.
    In: 9th International Workshop on Thermal Investigations of ICs and Systems, September 24-26 (THERMINIC 2003), Aix-en-Provence, France, 2003, pp. 307-312.
  • Hoffmann R., Wachutka G.:
    Toner particle transfer resulting from alternating electrical fields.
    In: 7th US National Congress on Computational Mechanics, July 28-30 (USACM 2003), Albuquerque, NM, USA, 2003.
  • Horn A., Wachutka G.:
    Improved step flow model for simulation of orientation-dependent wet etching of silicon.
    In: Technical Digest 12th International Conference on Solid-State Sensors, Actuators and Microsystems, June 8-12 (TRANSDUCERS 2003), Boston, MA, USA, 2003, pp. 1663-1666 vol.2-1663-1666 vol.2.
  • Icaza Deckelmann A., Wachutka G., Hirler F., Krumrey J., Henninger R.:
    Failure of multiple-cell power DMOS transistors in avalanche operation.
    In: Proc. 33rd Conference on European Solid-State Device Research, September 16-18 (ESSDERC 2003), Estoril, Portugal, 2003, pp. 323-326.
  • Icaza Deckelmann A., Wachutka G., Krumrey J., Hirler F., Henninger R.:
    Failure of power DMOS transistor arrays under unclamped inductive switching stress conditions.
    In: Proc. IEEE Conference on Electron Devices and Solid-State Circuits, December 16-18 (EDSSC 2003), Hong Kong, Hong Kong, 2003, pp. 305-308.
  • Icaza Deckelmann A., Wachutka G.:
    Optimization of LGate for ggNMOS ESD protection devices fabricated on Bulk- and SOI- Substrates, using Process and Device Simulation.
    In: International Conference on Simulation of Semiconductor Process and Devices, September 3-5 (SISPAD 2003), Boston, MA, USA, 2003, pp. 251-254.
  • Icaza Deckelmann A., Wachutka G.; Hirler F.; Krumrey J.; Henninger R.:
    Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation.
    In: Microelectronics Reliability, Vol. 43 (9-11), 2003, pp. 1895-1900.
  • Kaindl W., Solkner G., Wachutka G.:
    Analysis of charge carrier multiplication events in NPT and PT-diodes triggered by an ionizing particle.
    In: Proc. IEEE Conference on Electron Devices and Solid-State Circuits, December 16-18 (EDSSC 2003), Hong Kong, Hong Kong, 2003, pp. 383-386.
  • König E.-R., Mayr A., Wachutka G.:
    Numerical Analysis of Contact Problems in MEMS by Homotopy Methods.
    In: Proceedings of the European Conference on Solid-State Transducers EUROSENSORS XVII, September 21-14 (EUROSENSORS 2003), Guimaraes,Portugal, 2003, pp. 212-213.
  • M. Strasse., R. Aigne., C. Lauterbac., T.F. Stur., M. Franos., G. Wachutka:
    Micromachined CMOS thermoelectric generators as on-chip power supply.
    In: Technical Digest 12th International Conference on Solid-State Sensors, Actuators and Microsystems, June 8-12 (TRANSDUCERS 2003), Boston, MA, USA, 2003, pp. 45-48.
  • Mahe C., Tranchant J.F., Tromeur M., Schwesinger N.:
    Emulsions on demand using microstructured devices.
    In: Proc. SPIE Microfluidics, BioMEMS, and Medical Microsystems, January 27-29, San Jose, CA, USA, 2003, pp. 290-296.
  • Mayr A., König E.-R., Wachutka G.:
    New Full 3D-Analysis Tool for Electro-Mechanical Micro devices Using Coupled BEM-FEM / TP2000.
    In: The 14th Micromechanics Europe Workshop, November 2-4 (MME 2003), Delft,The Netherlands, 2003, pp. 243-246.
  • Messerer P., Awakowicz P.:
    Plasma Diagnostics On A Double Inductively Coupled Plasma Reactor.
    In: Frontiers in Low Temperature Plasma Diagnostics V, April 3-7, Villaggio Cardigliano Specchia, Italy, 2003, pp. 160-163.
  • Messerer P., Bönigk B., Awakiwicz P.:
    Sterilisation and plasma diagnostics on a double inductively coupled plasma reactor.
    In: 14th International Colloquium on Plasma Processes, June 30 - July 3, Antibes,France, 2003, pp. 18-20.
  • Messerer P., Bönigk B., Awakowciz P.:
    Characterisation of a Double Inductively Coupled Plasma Reactor.
    In: 16th International Symposium on Plasma Chemistry (ISPC 2003), Bari, Italy, 2003.
  • Messerer P., Kühl O., Bönigk B., Keil G., Awakowicz P.:
    Plasma Sterilization and Surface Modification of Medical Implants.
    In: Biomedical Aspects of Plasma Physics APP Spring Meeting, February 23-26, Bad Honnef, Germany, 2003, pp. 79-82.
  • Niedernostheide F.-J., Schmitt M., Schulze H.-J., Kellner-Werdehausen U., Frohnmeyer A., Wachutka G.:
    Analysis of Radiation-Induced Defects and Performance Conditioning in High-Power Devices.
    In: Journal of The Electrochemical Society (J. Electrochem. Soc.), Vol. 150 (1), 2003, pp. G15-G21.
  • Probering S., Schwesinger N.:
    A New Micro Hydro Power Device.
    In: Proceedings of NSTI Nanotechnology Conference and Trade Show, February 23-27 (NSTI Nanotech 2003), Vol. 1, San Francisco, CA, USA, 2003, pp. 372-375.
  • Probering S., Schwesinger N.:
    Micro Hydro Power Generator.
    In: International Conference and Exhibition on Micro Electro, Opto, Mechanical Systems and Components MICRO SYSTEM Technologies, October 7-8, München, Germany, 2003, pp. 350-357.
  • Ramminger S., Wachutka G.:
    Wire bond failures in Power Modules.
    In: Proceedings of SME International Mechanical Engineering Congress and RD and D Expo (IMECE 2003), Vol. 2, Washington, D.C., USA, 2003.
  • Sattler R., Schrag G., Wachutka G.:
    Mixed-Level Model for Highly Perforated Torsional Actuators Coupling the Mechanical, the Electrostatic and the Fluidic Domain.
    In: Proceedings of NSTI Nanotechnology Conference and Trade Show, February 23-27 (NSTI Nanotech 2003), 2003, pp. 412-415.
  • Schrag G.:
    Modellierung gekoppelter Effekte in Mikrosystemen auf kontinuierlicher Feldebene und Systemebene.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 6, , Shaker Verlag, Aachen, 2003, 184 pages.
  • Schwefel R., Awakowicz P.:
    Transient Plasma parameters of pulsed inductively coupled planar rf plasmas at 27 MHz.
    In: 16th International Symposium on Plasma Chemistry (ISPC 2003), Bari, Italy, 2003.
  • Schwefel R., Brunner C., Werthan A., Awakowicz P.:
    Plasma Diagnostics of Pulsed Inductively Coupled RF (27.12 MHz) Plasmas.
    In: Frontiers in Low Temperature Plasma Diagnostics V, April 3-7, Villaggio Cardigliano Specchia, Italy, 2003, pp. 106-109.
  • Schwesinger N.:
    Materialien für Mikroaktoren.
    In: 21. Konstruktions-Symposium - Innovative Lösungen für die Apparatetechnik, February 10, Frankfurt am Main, Deutschland, 2003, pp. 61-70.
  • Sölkner G., Bommersbach R., Kaindl W., Wachutka G.:
    Reliability of power electronic devices against cosmic radiation-induced failure.
    In: The Svedberg Laboratory Workshop of Applications, May 8-9, Uppsala, Sweden, 2003.
  • Thalhammer R., Wachtuka G.:
    Virtual optical experiments. Part II. Design of experiments.
    In: Journal of the Optical Society of America A (J. Opt. Soc. Am. A), Vol. 20 (4), 2003, pp. 707-713.
  • Thalhammer R., Wachutka G.:
    Virtual optical experiments. Part I. Modeling the measurement process.
    In: Journal of the Optical Society of America A (J. Opt. Soc. Am. A), Vol. 20 (4), 2003, pp. 698-706.
  • Voigt P.:
    Compact modeling of microsystems.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 7, , Shaker Verlag, Aachen, Germany, 2003, 159 pages.
  • Wenig G., Scheubert P., Awakowicz P.:
    An Efficient Model For Inductively Coupled Multi-component Plasma.
    In: 16th International Symposium on Plasma Chemistry (ISPC 2003), Bari, Italy, 2003.
  • Wenig G., Scheubert P., Schwefel R., Awakowicz P.:
    Diagnostic Validation of an Efficient Model for Inductively Coupled Plasmas.
    In: Frontiers in Low Temperature Plasma Diagnostics V, April 3-7, Villaggio Cardigliano Specchia, Italy, 2003, pp. 156-159.

    2002  Top
  • Bogdanov S., Probering S., Schwesinger N.:
    Self-Sustaining Micro Mechanical Power Source.
    In: 8th International Conference on New Actuators and 2nd International Exhibition on Smart Actuators and Drive Systems, June 10-12 (ACTUATOR 2002), Bremen, Germany, 2002, pp. 308-311.
  • Böhm P., Gerstemnaier Y.C., Hoppe R.H.W., Iliash Y., Mazurkevitch G., Wachutka G.:
    Modeling and Simulation of Electrothermomechanical Coupling Phenomena in High Power Electronics.
    In: Proceedings of the 3rd Int. FORTWIHR Conference on HPSEC, March 12-14, Erlangen, Germany, 2001 (Lecture Notes in Computational Science and Engineering, Vol. 21, Springer), Berlin, Heidelberg, New York, 2002, pp. 393-400.
  • Böhm P., Hoppe R.H.W., Wachtuka G.:
    Modeling and Simulation of the Transient Electromagnetic Behavior of High Power Bus Bars.
    In: Proceedings of the 3rd Int. FORTWIHR Conference on HPSEC, March 12-14, Erlangen, Germany, 2001, Lecture Notes in Computational Science and Engineering, Vol. 21, Springer, New York, NY, USA, 2002, pp. 385-392.
  • Felsl H.-P., Rupp R., Wachutka G.:
    The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation.
    In: European Conference on Silicon Carbide and Related Materials, September 2-5, (Materials Science Forum, Vol. 433-436), Linkoeping,Sweden, 2002, pp. 839-843.
  • Felsl H.-P., Wachutka G.:
    Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination.
    In: Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems, April 21-25 (NSTI Nanotech 2002), Vol. 1, 2002, pp. 568-571.
  • Felsl.H.-P., Wachutka G.:
    Performance of 4H-SiC Schottky Diodes with Al doped p-Guarding Junction Termination at Reserve Bias.
    In: International Conference on Silicon Carbide and Related Materials, October 28 - November 2, 2001 (ICSCRM 2001), Tsukuba, Japan, (Material Science Forum, Vol. 389-393), 2002, pp. 1153-1156.
  • Gerstenmaier Y. C., Wachutka G.:
    Rigorous model and network for transient thermal problems.
    In: Microelectronics Journal (Microelectron. J.), Vol. 33 (9), 2002, pp. 719-725.
  • Gerstenmaier Y.C., Wachtuka G.:
    Heat Conduction as Eigenvalue Problem.
    In: Proceedings of the 3rd Int. FORTWIHR Conference on HPSEC, Erlangen, March 12-14, 2001 (Lecture Notes in Computational Science and Engineering, Vol. 21, Springer), Berlin, Heidelberg, New York, 2002, pp. 401-408.
  • Gerstenmaier Y.C., Wachutka G.:
    Compact Thermal Model for Transient Temperature Fields in Electronic Systems.
    In: Proceedings of the 5th International Conference on Modeling and Simulation of Microsystems, April 21-25 (MSM 2002, NSTI Nanotech), Vol. 1, San Juan, Puerto Rico, USA, 2002, pp. 608-611.
  • Gerstenmaier Y.C., Wachutka G.:
    Effiziente transiente Temperaturfeld-Berechnungen in leistungelektronischen Systemen.
    In: 31. Kolloquium Halbleiter- Leistungsbauelemente und ihre systemtechnische Anwendung, Okt. 28-29 (31. Freiburger HL-Bauelemente Kolloquium), Freiburg, Germany, 2002, pp. CD-ROM.
  • Gerstenmaier Y. C., Pape H., Wachutka G.:
    Rigorous model and network for static thermal problems.
    In: Microelectronics Journal (Microelectron. J.), Vol. 33 (9), 2002, pp. 711-718.
  • Gerstenmaier Y.C., Wachtuka G., Seliger N.:
    Efficient Calculation of Transient Temperature Fields Responding to Fast Changing Heatsources over Long Duration in High Frequency DC/DC Converter.
    In: 8th International Workshop on Thermal Investigations of ICs and Systems, October 1-4 (THERMINIC 2002), Madrid, Spanien, 2002, pp. 297-302.
  • Handtmann M., Aigner R., Meckes A., Wachutka G.:
    Sensitivity enhancement of MEMS inertial sensors using negative springs and active control.
    In: Sensors and Actuators A: Physical, Vol. 97-98, 2002, pp. 153-160.
  • Hoffmann R., Wachtuka G.:
    Simulation of Electrical Field Induced Particle Transfer.
    In: 5th International Conference on Modeling and Simulation of Microsystems (NSTI Nanotech 2002), Vol. 1, San Juan, Puerto Rico, USA, 2002, pp. 258-261.
  • Horn A., Wachutka G.:
    Modeling of Orientation-Dependent Wet Etching of Silicon: Application to Complex MEMS-Structures.
    In: Book of Abstracts of the 16th European Conference on Solid-State Transducers EUROSENSORS XVI, September 15-18 (EUROSENSORS 2002), Prag, Czech Republic, 2002, pp. 115-116.
  • Horn A., Wachutka G.:
    Realistic Step Flow Model for Orientation-Dependent Wet Etching.
    In: Proceedings of the 3rd Int. FORTWIHR Conference on HPSEC, March 12-14, Erlangen, Germany, 2001, Lecture Notes in Computational Science and Engineering, Vol. 21, Springer, New York, NY, USA, 2002, pp. 369-376.
  • Icaza Deckelmann A., Wachutka G., Hirler F., Krumrey J.:
    Integrierte Leistungstransistoren: ungleimäßige Stromverteilung, Filamentbildung und Ausfallmechanismus.
    In: 31. Kolloquium Halbleiter-Leistungsbauelemente und ihre Systemtechnische Integration, October 28-29, Freiburg, Germanyany, 2002.
  • Icaza Deckelmann A., Wachutka G., Hirler F., Krumrey J.:
    UIS-Failure of DMOS Power Transistors.
    In: Proceeding of the 32nd European Solid-State Device Research Conference, September 24-26 (ESSDERC 2002), Firenze, Italy, 2002, pp. 459-462.
  • Icaza-Deckelmann A., Wachutka G., Krumrey J., Hirler F.:
    Failure mechanism of power DMOS transistors under UIS stress conditions.
    In: International Conference on Advanced Semiconductor Devices and Microsystems, October 14-16 (ASDAM 2002), Smolenice, Slovakia, 2002, pp. 349-352.
  • Kaindl W., Solkner G., Voss P., Wachutka G.:
    Modelling of ion-induced charge generation in high voltage diodes.
    In: Proceedings of the 3rd Int. FORTWIHR Conference on HPSEC, March 12-14, Erlangen, Germany, 2001, Lecture Notes in Computational Science and Engineering, Vol. 21, Springer, New York, NY, USA, 2002, pp. 377-384.
  • Kaindl W., Sölkner G., Wachutka G.:
    Modellierung und Simulation höhenstrahlungsinduzierter generation von Ladungsträgern in Leistungsbauelementen.
    In: 31. Kolloquium Halbleiter-Leistungsbauelemente und ihre Systemtechnische Integration, October 28-29, Freiburg im Breisgau,Germany, 2002, pp. 23-36.
  • König E.-R., Wachutka G.:
    Multi-Parameter Homotopy for the Numerical Analysis of MEMS.
    In: Book of Abstracts of the 16th European Conference on Solid-State Transducers EUROSENSORS XVI, September 15-18 (EUROSENSORS 2002), Prag, Czech Republic, 2002, pp. 35-36.
  • Lades M.:
    Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H-SiC.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., Vol. 3, , Shaker Verlag, Aachen, Germany, 2002, 161 pages.
  • Mahe C., Tranchant J.F., Burgold J., Schwesinger N.:
    A microstructured device for the production of emulsions on demand.
    In: IMRET VI, New Orleans USA, 2002, pp. 159-167.
  • Mayr A., König E.-R., Wachutka G.:
    Numerical Analysis of an Inclination Sensors by Force Homotopy.
    In: Book of Abstracts of the Workshop on MicroMechanics Europe, October 6-8 (MME 2002), Sinaia,Romania, 2002, pp. 177-180.
  • Sattler R., Wachutka G.:
    Improved convergence of electromechanical transducer element.
    In: International Conference on Design, Test, Integration and Packaging of MEMS/MOEMS, May 6-8 (DTIP 2002), Cannes-Mandelieu, France, 2002, pp. 20-27.
  • Sattler R., Plötz F., Fattinger G., Wachutka G.:
    Modeling of an electrostatic torsional actuator: demonstrated with an RF MEMS switch.
    In: Sensors and Actuators A: Physical, Vol. 97-98, 2002, pp. 337-346.
  • Sattler R., Schrag G., Wachutka G.:
    Physically-Based Damping Model for Highly Perforated and Largely Deflected Torsional Actuators.
    In: Proc. of 5th Int. Conf. on Modeling and Simulation of Microsystems, April 22-25 (MSM 2002), San Juan, Puerto Rico, 2002, pp. 124-127.
  • Sattler R., Schrag G., Wachutka G.:
    Squeeze Film Damping for Perforated Microstructures under Large Displacement.
    In: Proc. of 20th CADFEM User Meeting, International Congress on FEM Technology, November 9-11, Friedrichshafen, Deutschland, 2002, pp. 1.6.3.
  • Scheubert P.:
    Modelling and Diagnostics of Low Pressure Plasma Discharges.
    Series: Ausgewählte Probleme der Elektronik und Mikromechanik, Eds.: Wachutka G. and Schmitt-Landsiedel D., , Shaker Verlag, Aachen, Germany, 2002, 128 pages.
  • Schmitt M., Schulze H.-J., Schlogl A., Vosseburger A., Willmeroth A., Deboy G., Wachutka G.:
    A comparison of electron, proton and helium ion irradiation for the optimization of the CoolMOS/spl trade/ body diode.
    In: 14th International Symposium on Power Semiconductor Devices and ICs, June 4-7 (ISPSD 2002), Santa Fe, USA, 2002, pp. 229-232.
  • Schrag G., Wachutka G.:
    Accurate system-level damping model for highly perforated micromechanical devices.
    In: Book of Abstracts of the 16th European Conference on Solid-State Transducers EUROSENSORS XVI, September 15-18 (EUROSENSORS 2002), Prag, Czech Republic, 2002.
  • Schrag G., Wachutka G.:
    Physically based modeling of squeeze film damping by mixed-level system simulation.
    In: Sensors and Actuators A: Physical, Vol. 97-98, 2002, pp. 193-200.
  • Schrag G., Sattler R., Wachutka G.:
    System level model of damping effects for highly perforated torsional microstructures.
    In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002), Kobe, Japan, 2002, pp. 111-114.
  • Schulze H.-J., Niedernostheide F.-J., Kellner-Werdehausen U., Wachutka G.:
    Influence of Irradiation Induced Defects on the Electrical Performance of Power Devices.
    In: Meeting Abstracts of the 202nd Meeting of The Electrochemical Society, Salt Lake City,Utah, USA, 2002, pp. 621.
  • Schwesinger N.:
    Mikrostrukturierte modulare Reaktionssysteme für die chemische Synthese - Teil I Grundkonzepte,Materialien und Herstellungsverfahren.
    In: F und M Mikrotechnik (2002) 1-2, 2002, pp. 69-73.
  • Schwesinger N.:
    Mikrostrukturierte modulare Reaktionssysteme für die chemische Synthese - Teil II Mikroreaktionsmodule auf Siliziumbasis.
    In: F und M Mikrotechnik (2002) 4, 2002, pp. 17-21.
  • Schwesinger N.:
    Silizium - folgt die chemische Mikrolabortechnik der Mikroelektronik?.
    In: Chemische und biologische Mikrolabortechnik - Workshop, February 20-22, Ilmenau, 2002.
  • Strasser M., Aigner R., Franosch M., Wachutka G.:
    Miniaturized thermoelectric generators based on poly-Si and poly-SiGe surface micromachining.
    In: Sensors and Actuators A: Physical, Vol. 97-98, 2002, pp. 535-542.
  • Wachutka G.:
    Coupled-field modeling of microdevices and microsystems.
    In: International Conference on Simulation of Semiconductor Processes and Devices, June 4-6 (SISPAD 2002), Kobe, Japan, 2002, pp. 9-14.
  • Wachutka G.:
    From Continuous Field Modeling to MEMS Macromodels.
    In: 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2002), Wroclaw,Polen, 2002, pp. 89-94.
  • Wachutka G., Schrag G.:
    Macromodeling of Microfluidic Effects.
    In: Book of Abstracts of the 5th World Congress on Computational Mechanics, July 9 (WCCM V), Vol. 1, Vienna, Austria, 2002, pp. 449.
  • Wachutka G., Schrag G., Sattler R.:
    Macromodeling of fluidic damping effects in microdevices.
    In: 4th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2002), 2002, pp. 329-332.
  • Wachutka G., Schrag G., Voigt P.:
    On the Way to Predictive Simulation of Microdevices and Microsystems.
    In: Proc. of Int. Conf. on Sensors and Systems, June 24-27, Vol. Vol. I, Saint Petersburg, Russia, 2002, pp. 21-27.

    2001  Top
  • Awakowicz P.:
    Diagnostic and Modelling of Continous and Pulsed ICP Discharges.
    In: 25th Int. Conf. on Phenomena in Ionized Gases, Jul 17-22 (ICPIG 2001), Nagoya, Japan, 2001.
  • Awakowicz P.:
    Plasma Technology for the Sanitation of Packaging Materials.
    In: Conference on Hygienic, Aseptic and Sterile Processing for Food and Pharmaceutical Industries, Oct 08-09, Weihenstephan, Deutschland, 2001.
  • Awakowicz P., Keil G.:
    Sterilisation von Packstoffen, Hohlkörpern und thermolabilen medizinischen Materialien mit Niederdruckplasmen.
    In: Vakuum, 2001.
  • Awakowicz P., Fantz U., Scheubert P.:
    Inductively Coupled Plasma Sources: Diagnostics and Modelling.
    In: Plasma Sources Science and Technology, 2001.
  • Awakowicz P., Schwefel P., Scheubert P., Benstetter G.:
    Deposition of a-C:H Films with an ECWR-Reactor at 27 MHz:Plasma Diagnostics and Correlation to Film Properties.
    In: Surface and Coatings Technology, 2001.
  • Böhm P., Wachutka G.:
    Numerische Analyse verteilter parasitärer Induktionseffekte in Hochleistungsverschienungen.
    In: 30. Kolloquium für Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, Freiburg, Deutschland, 2001.
  • Deboy G., Pürschel M., Schmitt M., Willmeroth A.:
    Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application.
    In: Proceeding of the 31st European Solid-State Device Research Conference, Sep 11-13 (ESSDERC 2001), Nürnberg, Germany, 2001, pp. 61-68.
  • Gerstenmaier Y.C., Wachutka G.:
    Kompakte thermische Modelle für Temperaturfelder in Leistungsmodulen.
    In: 30. Kolloquium für Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, Okt. 29-30, Freiburg, Deutschland, 2001.
  • Gerstenmaier Y.C., Wachutka G.:
    Rigorous model and network for transient thermal problems.
    In: 7th International Workshop on Thermal Investigations of ICs and Systems, Sept 24-27 (Therminic 2001), Paris, France, 2001, pp. 5-10.
  • Gerstenmaier Y.C., Wachutka G.:
    Time dependent temperature fields calculated using eigenfunctions and eigenvalues of the heat conduction equation.
    In: Microelectronics Journal (Microelectron. J.), Vol. 32 (10-11), 2001, pp. 801-808.
  • Gerstenmaier Y.C., Pape H., Wachutka G.:
    Boundary Independent Exact Compact Thermal Model for Electronic Systems.
    In: Proceedings of the 4th International Conference on Modeling and Simulation of Microsystems, March 19-21 (MSM 2001), Hilton Head Island, SC, USA, 2001, pp. 84-87.
  • Gerstenmaier Y.C., Pape H., Wachutka G.:
    Rigorous model and network for static thermal problems.
    In: 7th International Workshop on Thermal Investigations of ICs and Systems, Sept. 24-27 (Therminic 2001), Paris, France, 2001, pp. 203-208.
  • Handtmann M., Aigner R., Meckes A., Wachutka G.:
    Sensitivity enhancement of MEMS inertial sensors using negative springs and active control.
    In: 11th Int. Conf. on Solid-State Sensors and Actuators, Jun 10-14 (TRANSDUCERS 2001), München, Germany, 2001, pp. 64-67.
  • Horn A., Wachutka G.:
    Simulation of Orientation-Dependent Wet Etching Using a Realistic Flow Model.
    In: 8th Int. Conf. on Mixed Design of Integrated Circuits and Systems (MIXDES 2001), Zakopane, Poland, 2001, pp. 413-416.
  • Horn A., Wittmann F., Wachutka G.:
    Realistic Step Flow Model for Orientation-Dependent Wet Etching Implemented in a Modular TCAD Environment.
    In: Sensors and Materials, Vol. 13 (6), 2001, pp. 315-323.
  • Icaza-Deckelmann A., Wachutka G., Groos G., Kanert W.:
    Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics.
    In: Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices, Oct. 5-7 (SISPAD 2001), Athen, Greece, 2001, pp. 396-399.
  • Kaindl W., Sölkner G., Voß P., Wachutka G.:
    Modelling of ion-induced charge generation in high voltage diodes.
    In: Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2001), 2001, pp. 223-226.
  • Kaindl W., Sölkner G., Wachutka G.:
    Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High Voltage Power Devices.
    In: Proc. of the Int. Conf. of the Simulation of Semiconductor Processes and Devices (SISPAD 2001), Athen, Greece, 2001, pp. 436-439.
  • Kappen K., Bauder U.H.:
    Calculation of plasma radiation transport for description of propellant ignition and simulation of interior ballistics in ETC guns.
    In: IEEE Transactions on Magnetics, Vol. 37 (1), 2001, pp. 169-172.
  • Mayr A., Wachutka G.:
    Numerische Analyse elektromechanisch gekoppelter Mikrobauelemente mit TP 2000/BEMFEM.
    In: 5. Chemnitzer Fachtagung Mikromechanik und Mikroelektronik, Chemnitz, Germany, 2001, pp. 62-69.
  • Meckes A., Aigner R., Dorfinger G., Wachutka G.:
    Capacitive Silicon Microsensor for Force and Torque Measurement.
    In: 11th Int. Conf. on Solid-State Sensors and Actuators, Jun 10-14 (TRANSDUCERS 2001), Vol. 1, München, 2001, pp. 498-501.
  • Meßerer P., Keil G., Awakowicz P.:
    First Measurements in a Double-Inductive Plasma.
    In: 2nd Workshop in Inductive Coupled Plasmas, July 6-7 (WICP 2001), Bad Tölz, Germany, 2001.
  • Niedernostheide F.-J., Schulze H.-J., Kellner-Werdehausen U., Frohnmeyer A., Wachutka G.:
    Radiation-Induced Defects Utilized for Performance Tailoring in High-Power Devices.
    In: Symposium on Crystalline Defects and Contamination, Oct 13-14 (DECON 2001), Nürnberg, Germany, 2001, pp. 112-120.
  • Sattler R., Plötz F., Hoffmann S., Wachutka G.:
    System Level Modeling of an Electrostatic Torsional Actuator.
    In: Proceedings of the Int. Conf. on Simulation of Semiconductor Processes and Devices, Oct 5-7 (SISPAD 2001), Athen, Greece, 2001, pp. 178-181.
  • Sattler R., Voigt P., Pradel H., Gerhard Wachutka G.:
    Innovative design and modelling of a micromechanical relay with electrostatic actuation.
    In: Journal of Micromechanics and Microengineering, Vol. 11, 2001, pp. 428-433.
  • Sattler R., Wachutka.G.:
    Comparison of Alternative Methods for the Simulation of Coupled Elctrostatic and Mechanical Problems.
    In: Proc. of the 12th Micromechanics Europe Workshop, Oct 16-18 (MME 2001), Cork, Ireland, 2001, pp. 237-240.
  • Sattler R., Plötz F., Wachutka G.:
    Macromodeling of an Electrostatic Torsional Actuator.
    In: Proc. of the 11th Int. Conf. on Solid-State Sensors and Actuators, Jun 10-14 (TRANSDUCERS 2001), Munich, Germany, 2001, pp. 248-251.
  • Scheubert P., Awakowicz P., Frantz U.:
    Characterization of an ICP Discharge with Optical Emission Spectroscopy and Langmuir Probe Measurement.
    In: Proc. of the Conf. on Frontiers in Low Temperature Plasma Diagnostics IV, Rolduc, Netherlands, 2001.
  • Scheubert P., Awakowicz P., Schwefel R., Wachutka G.:
    Fluid dynamic modelling and experimental diagnostics of an inductive high density plasma source (ICP).
    In: Surface and Coatings Technology, Vol. 142-144, 2001, pp. 526-530.
  • Scheubert P., Fantz U., Awakowicz P., Paulin H.:
    Experimental and theoretical characterization of an inductively coupled plasma source.
    In: Journal of Applied Physics, Vol. 90 (2), 2001, pp. 587-598.
  • Scheubert P., Wenig G., Awakowicz P.:
    RF-Sheaths:Influence on Ion Inertia under Typical ICP Conditions.
    In: 2nd Workshop in Inductive Coupled Plasmas, July 6-7 (WICP 2001), Bad Tölz, Germany, 2001.
  • Schrag G., Voigt P., Wachtuka G.:
    Squeeze Film Damping in Arbitrary Shaped Microdevices Modelled by an Accurate Mixed Level Scheme.
    In: Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems (Nanotech 2001), Vol. 1, 2001, pp. 92-95.
  • Schrag G., Voigt P., Wachutka G.:
    Physically-based Modeling of Squeeze Film Damping by Mixed Level System Simulation.
    In: Proc. of 11th Int. Conf. on Solid-State Sensors and Actuators, June 11-14 (Transducers 2001), 2001, pp. 670-673.
  • Schröder H., Obermeier E., Horn A., Wachutka G.:
    Convex corner undercutting of {100} silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results.
    In: Journal of Microelectromechanical Systems, Vol. 10 (1), 2001, pp. 88-97.
  • Schulze H.-J., Frohnmeyer A., Niedernostheide F.-J., Hille F., Tütto P., Pavelka T., Wachutka G.:
    Carrier Lifetime Analysis by Photoconductance Decay and Free Carrier Absorption Measurements.
    In: Journal of the Electrochemical Society, Vol. 148 (11), 2001, pp. G655-G661.
  • Steinhoff G., Eckhoff M., Wachutka G.:
    Charakterisierung von Oxid/Halbleiter-Grenzflächen an 6H- und 3C-SiC.
    In: 65. Tagung der Deutschen Physikalischen Gesellschaft, Mar 26-30, Vol. VI, Hamburg, Germany, 2001, pp. 195.
  • Strasser M., Aigner R., Franosch M., Wachutka G.:
    Miniaturized thermoelectric generators based on poly-Si and poly-SiGe surface micromachining.
    In: Proc. of the 11th Int. Conf. on Solid-State Sensors and Actuators, Jun 10-14 (Transducers 2001), Munich,Germany, 2001, pp. 26-29.
  • Strasser M., Aigner R., Wachutka G.:
    Microscale BiCMOS Thermoelectric Generators Based on Surface Micromachining.
    In: Proc. of the 6th European Workshop on Thermoelectrics, Freiburg, Germany, 2001.
  • Subramanyam T.K., Awakowicz P.:
    Basics and Results of Plasma Sterilization.
    In: 2nd Workshop in Inductive Coupled Plasmas, July 6-7 (WICP 2001), Bad Tölz, Germany, 2001.
  • Subramanyam T.K., Schwefel R., Awakowicz P.:
    Plasma Sterilization and Correlation to Plasma Diagnostics.
    In: Proc. of the 13th Int. Colloquium on Plasma Processes, Jun 10-14 (CIP 2001), Antibes, France, 2001.
  • Thalhammer, R.,:
    Internal Laser Probing Techniques for Power Devices.
    In: Shaker Verlag: Selected Topics of Electronics and Micromechatronics, Vol. 1, 2001.
  • Voigt P., Wachutka G.:
    Parameterextraktion für Mikrosystemkomponenten am Beispiel einer Mikromembranpumpe.
    In: 3. ITG/GMM-Workshop Multi-Nature Systems: Optoelektronische, mechatronische und andere gemischte Systeme, Feb 22, Hamburg-Harburg, Germany, 2001, pp. 71-76.
  • Wachutka G.:
    Physically-Based Macromodels of Microdevices and Microsystems: From Continous Fields to VHDL-AMS.
    In: Tunesian-German Conference on Smart Systems and Devices, Mar 27-30, Hammamet, Tunesia, 2001, pp. 113-118.
  • Wachutka G., Voigt P.:
    Physically-Based Full System Modeling of Microfluidic Components: From Continous Fields to VHDL-AMS.
    In: Proc. of the 6th U.S. National Congress on Computational Mechanics, Aug 1-3 (USACM 2001), Dearborn, MI, USA, 2001, pp. 807.

    2000  Top
  • Awakowicz P.:
    Niederdruck-Plasmatechnologie: Ein Mittel zur Sterilisation thermolabiler Packstoffe.
    In: Lebensmittel - Verfahrens- und Verpackungstechnik (LVT), Vol. 45 (1), 2000.
  • Awakowicz P., Schwefel P., Scheubert P., Benstetter G.:
    Deposition of a-C:H Films with an ECWR-Reactor at 27 MHz:Plasma Diagnostics and Correlation to Film Properties.
    In: 7th Int. Conf. on Plasma Surface Engineering, Oct 17-21 (PSE 2000), Garmisch-Partenkirchen, Germany, 2000.
  • Biro O., Preis K., Böhm P., Wachutka G.:
    Edge finite element analysis of transient skin effect problems.
    In: IEEE Transaction on Magnetics, Vol. 36 (4), 2000, pp. 835-839.
  • Böhm ., Wachutka G.:
    Modeling and Simulation of the Transient Electromagnetic Behavior of High Power Bus Bars under Switching Conditions.
    In: Proceedings of Int. Symposium on Power Semiconductors and ICs, Oct 25-28 (ISPSD 2000), Toulouse, France, 2000, pp. 303-307.
  • Frohnmeyer A., Niedernostheide F.-J., Schulze H.-J., Tütto P., Pavelka T., Wachutka G.:
    Analysis of The Injection Level and Temperature Dependence of Carrier Lifetime by Microwave Photoconductivity Decay.
    In: Proc. of 3rd Int. Conf. and Poster Exhibition on Micro Materials, Apr 17-19 (MicroMat 2000), Berlin, Germany, 2000, pp. 644-647.
  • Frohnmeyer A., Niedernostheide F.-J., Schulze H.-J., Tütto P., Pavelka T., Wachutka G.:
    Temperaturabhängigkeit der Niederinjektionslebensdauer von schwermetalldoetiertem n-Silizium.
    In: Frühjahrstagung der Deutschen Physikalischen Gesselschaft, Mar 27-31, Vol. IV, Regensburg, Germany, 2000, pp. 526.
  • Gerstenmaier Y.C., Wachutka G.:
    Calculation of the temperature development in electronic systems by convolution integrals.
    In: Proceedings of the 16th Annual IEEE Semiconductor Thermal Measurement and Management Symposium, March 21-23 (SEMI-THERM), San Jose, CA, USA, 2000, pp. 50-59.
  • Gerstenmaier Y.C., Wachutka G.:
    Time dependent temperature fields calculated using eigenfunctions and eigenvalues of the heat conduction equation.
    In: 6th International Workshop on Thermal Investigations of ICs and Systems, Sept. 24-27 (THERMINIC 2000), Budapest, Hungary, 2000, pp. 55-61.
  • Gulden W., Cook I., Marbach G., Raeder J., Petti D., Seki Y.:
    An update of safety and environmental issues for fusion.
    In: Fusion Engineering and Design, Vol. 51-52, 2000, pp. 419-427.
  • Handtmann M., Aigner R., Nadal R., Wachutka G.:
    Methodology of Macromodeling Demonstrated on Force Feedback S/D-Architectures.
    In: Proc. of the Int. Conf. on Modeling and Simulation of Microsystems, Mar 27-29 (MSM 2000), San Diego, CA, USA, 2000, pp. 138-141.
  • Hille F., Hoffmann L., Schulze H.-J., Wachutka G.:
    Carrier lifetime characterization using an optimized free carrier absorption technique.
    In: Proc. of the 12th Int. Symposium on Power Semiconductor Devices and ICs, May 22-25 (ISPSD 2000), Toulouse, Frankreich, 2000, pp. 299-302.
  • Hille F., Hoffmann L., Schulze H.-J., Wachutka G.:
    Charakterisierung der Trägerlebensdauer von Leistungsdioden mittels IR-Laserabsorption.
    In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft, Mar 27-31, Vol. IV, Regensburg, Germany#, 2000, pp. 545.
  • Horn A., Schröder H., Obermeier E., Wachutka G.:
    Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring.
    In: Proc. of the 3rd Int. Conf. on Modeling and Simulation of Microsystems, Mar 27-29 (MSM 2000), San Diego, CA, USA, 2000, pp. 63-66.
  • Horn A., Wittmann F., Wachutka G:
    Realistic Step Flow Model for Orientation-Dependent Wet Etching Implemented in a Modular TCAD Environment.
    In: 2nd Workshop on Physical Chemistry of Wet Etching of Silicon, May 15-16, Toulouse, France, 2000.
  • Kaindl W., Sölkner G., Voss P.., Wachutka G.:
    Numerische Analyse der höhenstrahlungsinduzierten Avalanche Generation.
    In: 29. Kolloquium für Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, Okt. 30-31, Freiburg im Breisgau,Germany, 2000.
  • Lades M., Wachutka G.:
    Electrothermal analysis of SiC power devices using physically-based device simulation.
    In: Solid-State Electronics, Vol. 44 (2), 2000, pp. 359-368.
  • Lades M., Kaindl W., Wachutka G.:
    Comprehensive Study of the Electrothermal Operation of SiC Power Devices Using a Fully Coupled Transport Model.
    In: Proceedings of the MRS Symposium: Wide-Bandgap Electronic Devices, Vol. 622, San Francisco, CA, USA, 2000, pp. T1.5.1-1.5.12.
  • Lades M., Kaindl W., Wachutka G.:
    Elektrothermische Simulation dynamischer Umladungseffekte in schnellschaltenden SiC-Leistungsbauelementen.
    In: 29. Kolloquium für Halbleiter-Leistungsbauelemente und ihre systemtechnische Anwendung, Okt. 30-31, Freiburg im Breisgau,Germany, 2000.
  • Mehnert C.; Hille F.; Hoffmann L., Wachutka G.:
    Kalibrierung von Freien Ladungsträgern-Absorptionsmessungen in Leistungsbauelementen.
    In: Frühjahrstagung der Deutschen Phsikalischen Gesellschaft, Mar 27-31, Vol. IV, Regensburg, Germany, 2000, pp. 545.
  • Raabe J., Pulwey R.., Sattler R., Schweinbock T., Zweck J., Weiss D.:
    Magnetization pattern of ferromagnetic nanodisks.
    In: Japanese Journal of Applied Physics (JJAP), Vol. 88 (7), 2000, pp. 4437-4439.
  • Ramminger S., Seliger N., Wachutka G.:
    Reliability model for A1 wire bonds subjected to heel crack failures.
    In: Proc. of the 11th Int. Symposium on Reliability of Electron Devices and Failure Analysis, Oct 2-6 (ESREF 2000), Vol. 40, Dresden ,Germany, 2000, pp. 1521-1525.
  • Sattler R., Voigt P., Pradel H., Wachutka G.:
    Innovative design and modelling of a micromechanical relay with electrostatic actuation.
    In: Technical Digest of the 11th Micromechanics Europe Wokshop (MME 2000), Vol. 11, Uppsala,Sweden, 2000, pp. 428-433.
  • Scheubert P., Awakowicz P., Schwefel R., Wachutka G.:
    Fluid Dynamic Modelling and Experimental Diagnostics of an Inductive Coupled High Density Plasma.
    In: 1st Workshop on Inductive Coupled Plasmas, Nov 10-11 (WICP 2000), Essen, Germany, 2000.
  • Scheubert P., Awakowicz P., Schwefel R., Wachutka G.:
    Fluid dynamic modelling and experimental diagnostics of an inductive high density plasma source (ICP).
    In: 7th Int. Conf. on Plasma Surface Engineering, Oct 17-21 (PSE 2000), Vol. 142-144, Garmisch-Partenkirchen, Deutschland, 2000, pp. 526-530.
  • Schrag G., Zelder G., Wachutka G.:
    Investigation of Cross-coupling and Parasitic Effects in Microelectromechanical Devices on Device and System Level.
    In: Proc. of the Int. Conf. on Modeling and Simulation of Microsystems, Mar 27-29 (MSM 2000), 2000, pp. 193-196.
  • Schulze H.-J., Frohnmeyer A., Niedernostheide F.-J., Simnacher B., Kolbesen B.O., Tütto P., Pavelka T., Wachutka G.:
    Analytical Tools for the Charcterization of Power Devices.
    In: Journal of the Electrochemical Society, Vol. 147, 2000, pp. 3897-3888.
  • Schulze H.-J., Frohnmeyer A., Niedernostheide F.J., Hille F., Tütto P., Pavelka T., Gerhard Wachutka G.:
    Carrier Lifetime Control and Characterization of High Resistivity Silicon Used for-Power Devices.
    In: 198th Fall Meeting of the Electrochemical Society, Phoenix, AZ, USA, 2000.
  • Seliger N., Ramminger S., Franke T., Wachutka G.:
    A Study of Heel Crack failures in Wire Bond Under Mechanical Cycling.
    In: Proc. of 3rd Int. Conf. and Poster Exhibition on Micro Materials, Apr 17-19 (MicroMat 2000), Berlin, Germany, 2000, pp. 522-525.
  • Strasser M., Aigner R., Wachutka G.:
    Analysis of CMOS Low Power Thermoelectric Generator.
    In: Proc. of the 14th European Conf. on Solid-State Transducers, Aug 27-30 (Eurosensors 2000), Copenhagen, Denmark, 2000, pp. 17-20.
  • Sölkner G., Kreutle J., Quincke J., Kaindl W., Wachutka G.:
    Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices.
    In: Microelectronics Reliability, Vol. 40 (8-10), 2000, pp. 1641-1645.
  • Sölkner G., Kreutle J., Quincke J., Kaindl W., Wachutka G.:
    Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices.
    In: Proc. of the 11th Int. Symposium on Reliability of Electron Devices and Failure Analysis, Oct 2-6 (ESREF 2000), Dresden, Germany, 2000, pp. 1641-1645.
  • Sölkner G., Voss P., Kaindl W.:
    Time-resolved Measurements and Simulations of Particle-Induced Single Event Effects in Power Semiconductor Devices.
    In: Nuclear and Space Radiation Effects Conference, Jul 24-28 (NSREC 2000), Reno, Nevada, USA, 2000.
  • Sölkner G., Voss P., Kaindl W., Wachutka G., Maier K.-H., Becker H.-W.:
    Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation.
    In: IEEE Transactions on Nuclear Science, Vol. 47 (6), 2000, pp. 2365-2372.
  • Thalhammer R., Hille F., Wachutka G.:
    Optimizing free carrier absorption measurements for power devices by physically rigorous simulation.
    In: International Conference on Simulation of Semiconductor Processes and Devices, Sep 6-8 (SISPAD 2000), Seattle, WA, USA, 2000, pp. 249-252.
  • Voigt P., Wachutka.G.:
    Compact MEMS Modeling for Design Studies.
    In: Proc. of the 3rd Int. Conf. on Modeling and Simulation of Microsystems, Mar 27-29 (MSM 2000), San Diego, CA, USA, 2000, pp. 134-137.
  • Wachutka G.:
    Computer Simulations of Microdevices and Microsystems.
    In: Proc. of the 3rd European Workshop on Microelectronic Education, May 18-19, Aix-en-Provence, France, 2000, pp. 91-94.
  • Wachutka G., Lades M., Kaindl W.:
    Comprehensive Analysis of SiC Power Devices Using a Fully Coupled Physical Transport Model.
    In: Proc. of the 3rd Int. Conf. on Advanced Semiconductor Devices and Microsystems, Oct 16-18 (ASDAM 2000), Smolenice,Slovakia, 2000, pp. 29-33.
  • Wachutka, G.,:
    Desired and Parasitic Coupled-Field Effects in MEMS.
    In: Proc. of the 7th Int. Conf. on Mixed Design of Integrated Circuits and Systems, Jun 15-17 (MIXDES 2000), Gdynia, Poland, 2000, pp. 37.

    1999  Top
  • Anschütz F.-B., Awakowicz P., Scheubert P., Schwefel R., Valentini H.-B.:
    A Hydrodynamic multi-component plasma model including excited species.
    In: Proc. of XXIV Int. Conf. on Phenomena in Ionized Gases, July 11-16 (ICPIG 1999), Vol. 4, Warsaw, Poland, 1999, pp. 177-178.
  • Anschütz F.-B., Awakowicz P., Scheubert P., Schwefel R., Valentini H.-B.:
    Hydrodynamic multi-component plasma model including excited species.
    In: International Symposium on Plasma Chemistry, August 2-6 (ISPC 14), Prague, Czech Republic, 1999.
  • Awakowicz P.:
    Diagnostics of reactive low temperature-low pressure plasmas with Langmuir probe measurement, energy mass spectrometry and optical emission spectroscopy.
    In: 12th Int. Colloquium on Plasma Processes, June 6-10 (CIP 1999), Antibes, France, 1999.
  • Awakowicz P.:
    Plasmasterilisation - eine neue technologie im Verpackungsbereich.
    In: Lebensmittel- Verfahrens - und Verpackungstechnik: LVT, Vol. 44, 1999.
  • Awakowicz P.:
    Plasmatechnik, ein Werkzeug zur Sterilisation für viele Branchen.
    In: Int. Conf. on Hygienic Production Technology, November 23-25 (Hy-Pro 1999), Wiesbaden, Germany, 1999.
  • Biro O., Böhm P., Preis K., Wachutka G.:
    Edge finite element analysis of transient skin effect problems.
    In: Int. Conference on the Computation of Electromagnetic Fields, October 25-28 (COMPUMAG 1999), Sapporo, Japan, 1999, pp. 694-697.
  • Böhm P., Wachutka G.:
    Transient Electromagnetic Behavior of Multiply Contacted Interconnects.
    In: 2nd Int. Conf. on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators, April 19-21 (MSM 1999), 1999, pp. 301-304.
  • Böhm P., Falck E., Sigg J., Wachutka G.:
    Numerical Analysis of Distributed Inductive Parasitics High Power Semiconductor Bus Bars.
    In: High performance scientific and engineering computing, Vol. 8 of Lecture notes in computational science and engineering, Springer. Proc. of International FORTWIHR Conference on HPSEC, March 16-18, 1999, pp. 397-404.
  • Böhm P., Sigg J., Wachutka G.:
    Investigation of High Power Bus Bars by Transient Numerical Analysis.
    In: 8th European Conference on Power Electronics and Applications, September 7-9 (EPE 1999), Lausanne, Switzerland, 1999.
  • Dürndorfer S., Gradinaru V., Hoppe R.H.W., König E.-R., Wachutka G.:
    Numerical Simulation of Microstructured Semiconductor Devices, Transducers and Systems.
    In: High performance scientific and engineering computing, Vol. 8 of Lecture notes in computational science and engineering, Springer. Proc. of International FORTWIHR Conference on HPSEC, March 16-18, 1999, pp. 309-323.
  • Frohnmeyer A., Baumann B., Reznik D., Schulze H.-J., Wachutka G.:
    Untersuchung der Minoritätsträgerlebensdauer an hochohmigem phosphordotiertem Silizium.
    In: Frühjahrstagung DPG, March 22-26, Münster, Germany, 1999.
  • Frohnmeyer A., Niedernostheide F.-J., Schulze H.-J., Beuermann M., Barthelmeß R., Schmidt G., Wachutka G.:
    Neue schnelle Dioden mit Druckkontakt für GCT/IGBT-Umrichter.
    In: 28. Kolloquium für Halbleiterbauelemente und Materialgüte Silizium, November 2-3, Freiburg, Germany, 1999.
  • Frohnmeyer A., Niedernostheide F.-J., Schulze H.-J., Tütto P., Pavelka T., Wachutka G.:
    Temperature Dependence of Carrier Recombination Lifetimes in n-Type Silicon.
    In: Int. Semiconductor Device Research Symposium, December 1-3 (IRDRS 1999), Charlottesville, VA, USA, 1999.
  • Fürbock C., Thalhammer R., Litzenberger M., Seliger N., Pogany D., Gornik E., Wachutka G.:
    A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices.
    In: Proceedings., The 11th International Symposium on Power Semiconductor Devices and ICs, May 25-28 (ISPSD 1999), Toronto, Canada, 1999, pp. 193-196.
  • Fürböck C., Thalhammer R., Litzenberger M., Seliger N., Wachutka G., Gornik E.:
    Internal Characterization of IGBTS Using the Backside Laserprober Technique.
    In: Annual Report of the Society for Microelectronics, April, 1999, pp. 57-62.
  • Gerstenmaier Y.C., Wachutka G.:
    A New Procedure for the Calculation of the Temperature Development in Electronic Systems.
    In: 8th European Conference on Power Electronics and Applications, September 07-09 (EPE 99), Lausanne, Switzerland, 1999.
  • Gerstenmaier Y.C., Wachutka G.:
    Berechnung der Temperaturentwicklung in elektronischen Systemen mittels Faltungsintegralen.
    In: 28. Kolloquium für Halbleiter-Leistungsbauelemente und Materialgüte von Silizium, Nov. 02.-03 (Freiburger HL-Bauelemente Kolloquium), Freiburg, Deutschland, 1999, pp. CD-ROM.
  • Gulden W., Raeder J.:
    An Update of Safety and Environmental Issues for Fusion.
    In: Fifth International Symposium on Fusion Nuclear Technology, September 19-24 (ISFNT-5), 1999.
  • Handtmann M., Aigner R., Plötz F., Wachutka G.:
    Macromodel for micromechanical multi-electrode structures in force feedback control systems.
    In: Int. Conf. on Simulation of Semiconductor Processes and Devices, September 6-8 (SISPAD 1999), Tokyo, Japan, 1999, pp. 183-186.
  • Hille F., Schulze H.-J., Wachutka G.:
    Charakterisierung und Modellierung von lebensdauereingestellten 6,5 kV-Dioden.
    In: 28. Kolloquium für Halbleiterbauelemente und Materialgüte Silizium, November 2-3, Freiburg, Germany, 1999.
  • Kaindl W., Lades M., Kaminski N., Niemann E., Wachutka G.:
    Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC.
    In: Journal Electronic Materials, Special Issue on III-V Nitrides and Silicon Carbide, Vol. 28 (3), 1999, pp. 154-160.
  • Kaindl W., Lades M., Wachutka G.:
    Transient electro-thermal analysis of dynamic punch-through in SiC power devices.
    In: International Conference on Simulation of Semiconductor Processes and Devices, September 6-8 (SISPAD 199), Tokyo, Japan, 1999, pp. 231-234.
  • Kaindl W., Lades W., Kaminski N., Niemann E., Wachutka G.:
    Charakterisierung und Simulation der Dynamik der unvollständigen Ionisation von N, Al und B als Dortierstoffe in 4H/6H-SiC.
    In: Frühjahrstagung DPG, Münster, Germany, 1999, pp. 744.
  • Kapels H., Urscher J., Aigner R., Sattler R., Wachutka G., Binde J.:
    Measuring fracture strength and long-term stability of polysilicon with a novel surface-micromachined thermal actuator by electrical wafer-level testing.
    In: Proc. of the 13th European Conference on Solid-State Transducers, September 13-15 (EUROSENSORS 1999), The Hague, The Netherlands, 1999, pp. 189-190.
  • Kapels H., Urscher J., Aigner R., Sattler R., Wachutka G., Binder J.:
    Novel Surface-Micromachined Thermal Actuator for Fracture and Reliability Characterisation of Polysilicon by Electrical Wafer-Level Testing.
    In: Proceeding of the 29th European Solid-State Device Research Conference, September 13-15 (ESSDERC 1999), Vol. 1, Leuven, Belgium, 1999, pp. 324-327.
  • Kratzer M., Brinkmann R.P., Scheubert P., Awakowicz P., Wachutka G.:
    Low Pressure Discharges in Plasma Reactors: Modeling and Computer-Aided Diagnostics.
    In: High Performance Scientific and Engineering Computing Vol. 8 (Abstracts of the International FORTWIHR Conference, March 16-18 1998), Springer, New York, NY, USA, 1999.
  • König E.-R., Wachutka G.:
    Analysis of Unstable Behavior Occurring in Electro-Mechanical Microdevices.
    In: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems, April 19-21 (MSM 1999), 1999, pp. 330-333.
  • König E.-R., Wachutka G.:
    Homotopy Method Applied to the Simulation of Unstable MEMS Behavior.
    In: Proc. of the 13th European Conference on Solid-State Transducers, September 13-15 (EUROSENSORS 1999), The Hague, The Netherlands, 1999, pp. 311-312.
  • König E.-R., Groth P., Wachutka G.:
    Analysis of Electro-Mechanical Microdevices Using Coupled FEM-BEM Based on the TP2000 CAD Platform.
    In: High Performance Scientific and Engineering Computing Vol. 8 (Abstracts of the International FORTWIHR Conference, March 16-18 1998), Springer, New York, NY, USA, 1999.
  • König E.-R., Groth P., Wachutka G.:
    New coupled-field device simulation tool for MEMS based on the TP2000 CAD platform.
    In: Sensors and Actuators A: Physical, Vol. 76 (1-3), 1999, pp. 9-18.
  • Lades M., Berz D., Schmid U., Sheppard S.T., Kaminski N., Wondrak W., Wachutka G.:
    Numerical simulation of implanted top-gate 6H-SiC JFET characteristics.
    In: Materials Science and Engineering B, Vol. 61-62, 1999, pp. 415-418.
  • Lades M., Kaindl W., Kaminski N., Niemann E., Wachutka G.:
    Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices.
    In: IEEE Transactions on Electron Devices, Vol. 46 (3), 1999, pp. 598-604.
  • Ramminger S., Turkes P., Wachutka G.:
    Crack mechanism in wire bonding joints.
    In: Materials Mechanics, Fracture Mechanics, micro Mechanics Eds.: Winkler,T.; Scheubert,A. Berlin/Chemnitz: Fraunhofer IZM,1999, 1999, pp. 83-87.
  • Ramminger S., Bauer J.G., Scherg T., Schulze H.-J., Mosig K., Wachutka G.:
    Temperature Behavior of Power Devices With Copper Metallization Using Thermal Simulation.
    In: 5th International Workshop on Thermal Investigations of Ics and Microstructures, October 3-6 (THERMINIC 1999), Rome, Italy, 1999, pp. 117-120.
  • Ramminger S., Mitic G., Türkes P., Wachtuka G.:
    Thermo-Mechanical Simulation of Wire Bonding Joints in Power Modules.
    In: 2nd Int. Conf. on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators, April 19-21 (MSM 1999), San Juan, Puerto Rico, USA, 1999, pp. 483-486.
  • Ramminger S., Schulze H.-J., Wachutka G.:
    Thermomechanische Simulation von Bondverbindungen in Leistungsmodulen.
    In: 28. Kolloquium für Halbleiterbauelemente und Materialgüte Silizium, November 2-3, Freiburg, Germany, 1999.
  • Scheubert P., Awakowicz P., Schwefel R., Wachutka G.:
    Coupled hydrodynamic and electrodynamic modelling of an transformer coupled plasma (TCP) for semiconductor processing.
    In: International Conference on Simulation of Semiconductor Processes and Devices, September 6-9 (SISPAD 1999), Kyoto, Japan, 1999, pp. 191-194.
  • Scheubert P., Anschütz F.-B., Schwefel R., Awakowicz P.:
    Modellierung und Diagnostik induktiv angeregter HF-Entladungen.
    In: 9. Bundesdeutsche Fachtagung, March 3-5 (BFPT 9), Stuttgart, Deutschland, 1999, pp. 97.
  • Scheubert P., Anschütz P., Schwefel R., Wachutka G.:
    Experimental and theoretical characterisation of a planar ICP source.
    In: XXIV Int. Conf. on Phenomena in Ionized Gases, July 11-16 (ICPIG 1999), Warsaw , Poland, 1999, pp. 175-176.
  • Scheubert P., Awakowicz P., Schwefel R., Wachutka G.:
    Diagnostics and Modelling of an ICP Discharge.
    In: Workshop on Frontiers in Low Temperature Plasma Diagnostics III, Saillon, Switzerland, 1999, pp. 171-174.
  • Schrag G., Zelder G., Kapels H., Wachutka G.:
    Numerical and experimental Analysis of Distributed electromechanical Parasitics in the Calibration of a Fully CMOS-Integrated Capacitive Pressure Sensor.
    In: Sensors and Actuators A: Physical, Vol. 76 (1-3), 1999, pp. 1155-1158.
  • Schwefel R.; Scheubert P.; Anschütz F.-B., Awakowicz P.:
    Plasmadiagnostik und chemische Modellierung eines planaren ICP-Plasmas (27 MHz) zur Abscheidung von Diamantschichten.
    In: 9. Bundesdeutsche Fachtagung, March 3-5 (BFPT 9), Stuttgart, Deutschland, 1999, pp. 63.
  • Schwefel R., Iannucci R., Awakowicz P., Scheubert P., Sotier S.:
    Diagnostic based chemical modeling of a argon-hydrogen-methane ICP plasma.
    In: 14th Int. Symp. on Plasma Chemistry, August 2-6 (ISPC 14), Prague, Czech Republic, 1999, pp. 1727-1732.
  • Schwefel R., Iannuci R., Scheubert P., Sotier S., Awakowicz P.:
    Plasmachemistry and diagnostics of Ar/H2/CH4 inductive coupled plasmas.
    In: 12th Symposium on Application of Plasma Processes, February 9-13 (SAPP 12), Lipotovsky Jan, Slovakia, 1999.
  • Strasser M., Plötz F., Aigner R., Wachutka G.:
    Device Performance of CMOS Low Power Thermoelectric Generators.
    In: 5th International Workshop on Thermal Investigations of Ics and Microstructures, October 3-6 (THERMINIC 1999), Rome, Italy, 1999, pp. 282-292.
  • Thalhammer R., Hille F., Scheubert P., Wachutka G.:
    Physically Rigorous Modeling of Sensing Techniques Exploiting the Thermo-Optical ane Electro-Optical Effect.
    In: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems, April 19-21 (MSM 1999), San Juan, Puerto rico,U.S.A., 1999, pp. 683-686.
  • Thalhammer R., Hille F., Wachutka G.:
    Design and Interpretation of Laser Absorption Measurements for Power Devices.
    In: Int. Semiconductor Device Research Symposium, December 1-3 (ISDRS 1999), Charlottesville, VA, USA, 1999, pp. 531-534.
  • Voigt P., Sattler R., Sasse P., Hoffmann S., Noe R., Wachutka G.:
    Parameterextraktion für Mikrosysteme am Beispiel eines Gyroskopes.
    In: 4. Chemnitzer Fachtagung Mikrosystemtechnik, October 11-12, Chemnitz, 1999, pp. 156-159.
  • Wachutka G.:
    Electrothermal analysis of SiC power devices using physically-based device simulation.
    In: 6th Intern. Conf.on Mixed Design of Integrated Circuits and Systems, June 17-19 (MIXDES 1999), Krakow,Poland, 1999, pp. 17-18.
  • Wachutka G.:
    Electrothermal analysis of SiC power devices using physically-based device simulation.
    In: Workshop on Wide Bandgap Bipolar Devices, Jan 24-28, Panama City Beach,FL,U.S.A., 1999.
  • Wachutka G.:
    Physical modeling and simulation of microdevices and microsystems.
    In: Symposium on Design, Test, and Microfabrication of MEMS and MOEMS, Marc 30 - April 1 (DTM 1999), Vol. 3680, Paris, France, 1999, pp. 12-19.
  • Wachutka G.:
    The Art of Modeling Coupled-Field Effects in Microdevices and Microsystems.
    In: 2nd Int. Conf. on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators, April 19-21 (MSM 1999), San Juan, Puerto Rico, U.S.A., 1999, pp. 14-19.
  • Wieser N., Ambacher O., Felsl H.-P., Gorgens L., Stutzmann M.:
    Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy.
    In: Applied Physics Letters (Appl. Phys. Lett.), Vol. 74 (26), 1999, pp. 3981-3983.

    1998  Top
  • Awakowicz P.:
    Diagnostics in Reactive Plasmas with Optical Emission Spectroscopy, Langmuir Probe Measurement and Energy-Mass Spectrometry.
    In: Trends and New Applications of Thin Films, March 18 (TATF 98), Regensburg, Germany, 1998.
  • Awakowicz P.:
    Diagnostics in Reactive Plasmas with Optical Emissions Spectroscopy, Probe Measurement and Enrgy-Mass-Spectrometry.
    In: Materials Science Forum, Vol. 287-288, 1998, pp. 3-22.
  • Awakowicz P., Schwefel R., Werder M., Kasper W.:
    Energy-mass Spectroscopy and automatic Langmuir probe measurements in reactive ICP Plasmas for diamond deposition.
    In: Surface and Coating Technology, Vol. 98, 1998, pp. 1020-1026.
  • Böhm P., Falck E., Sigg J., Wachutka G.:
    Continous field Analysis of Distributed Parasitic effects caused by Interconnects in High Power Semiconductor Modules.
    In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 1998), Leuven, Belgium, 1998, pp. 340-343.
  • Böhm P., Falck E., Sigg J., Wachutka G.:
    Continous field Analysis of Distributed Parasitic effects caused by Interconnects in High Power Semiconductor Modules.
    In: Abstracts of the International FORTWIHR Conference, March 16-18, Munich, Germany, 1998.
  • Böhm P., Falck E., Sigg J., Wachutka G.:
    Numerical analysis of distributed inductive parasitics in high power bus bars.
    In: High performance scientific and engineering computing, Vol. 8 of Lecture notes in computational science and engineering, Springer. Proc. of International FORTWIHR Conference on HPSEC, March 16-18, 1998.
  • Dürndorfer S., Gradinaru V., Hoppe R.H.W., König E.-R., Wachutka G.:
    Numerical Simulation of Microstructured Semiconductor Devices, Transducers and Systems.
    In: Abstracts of the International FORTWIHR Conference, March 16-18, Munich, Germany, 1998.
  • Frank T., Honsberg-Riedl M., Simon P., Otto J., Ramminger S., Sölkner G., Wolfgang E.:
    On-chip reliability investigations on power modules actually working in inverter systems.
    In: Microelectronics Reliability, Vol. 38 (6-8), 1998, pp. 1361-1366.
  • Frank T., Honsberg-Riedl M., Simon P., Otto J., Ramminger S., Sölkner G., Wolfgang E.:
    On-chip reliability investigations on power modules actually working in inverter systems.
    In: Proc. ESREF (ESREF 1998), Copenhagen, Denmark, 1998, pp. 1361-1366.
  • Frost R.M., Awakowicz P., Summers H.P., Badnell N.R.:
    Calculated cross sections and measured rate coefficients for electron-impact excitation of neutral and singly ionized nitrogen.
    In: Journal of Applied Physics (J. Appl. Phys.), Vol. 84 (6), 1998, pp. 2989-3003.
  • Fürböck C., Thalhammer R., Seliger N., Litzenberger M., Wachutka G., Gornik E.:
    IR-Interferometrie zur Messung transienter Temperatur- und Ladungsträgerverteilungen in IGBTs bei unterschiedlichen Lastzuständen.
    In: 48. Jahrestagung der Österreichischen Physikalischen Gesellschaft, September 14-17, Graz, Austria, 1998, pp. 113.
  • Gradinaru V., König E.R.:
    Numerische Simulation gekoppelter elektrothermischer Effekte in mikrostrukturierten Bauteilen.
    In: Tätigkeitsbericht FORTWIHR II, 1998, pp. 510.
  • Horn A., Wachutka G.:
    Microscopic and Phenomenological Approaches to the Numerical Modeling of Anisotropic Wet Etching.
    In: Abstracts of the Workshop on "Physical Chemistry of Wet Chemical Etching of Silicon", May 17-19, Holten, netherlands, 1998.
  • Kaindl W., Lades W., Kaminski N., Niemann E., Wachutka G.:
    Charakterisierung der elektrischen Eigenschaften von N, Al und B als Dortierstoffe in 4H/6H-SiC.
    In: 27. Kolloquium für Halbleiterbauelemente und Materialgüte Silizium, October 26-27, Freiburg, Germany, 1998.
  • Klick M., Kammeyer M., Rehak W., Franz G., Kasper W., Awakowicz P.:
    Innovative plasma diagnostics and control of process in reactive low-temperature plasmas.
    In: Surface and Coatings Technology, Vol. 98 (1-3), 1998, pp. 1395-1399.
  • Kratzer M., Brinkmann R.P., Scheubert P., Awakowicz P., Wachutka G.:
    Low Pressure Discharges in Plasma Reactors: Modeling and Computer-Aided Diagnostics.
    In: Abstracts of the International FORTWIHR Conference, March 16-18, Munich, Germany, 1998.
  • König E.R., Groth P., Wachutka G.:
    Analysis of Electro-Mechanical Microdevices Using Coupled FEM-BEM Based on the TP2000 CAD Platform.
    In: Abstracts of the International FORTWIHR Conference, March 16-18, 1998.
  • König E.R., Groth P., Wachutka G.:
    New Coupled Field Device Simulation Tool for MEMS Based on the TP2000 CAD Platform.
    In: Proc. of Eurosensors XII, September 13-16 (EUROSENSORS 1998), Southampton, UK, 1998, pp. 1167-1170.
  • Lades M., Wachtuka G.:
    Anisotroper Stromtransport in 4H/6HSiC Bauelementen.
    In: Frühjahrstagung DPG, Regensburg, Germany, 1998, pp. 696.
  • Lades M., Wachutka G.:
    Physical-Based Numerical Simulation of High Power Silicon Carbide Devices.
    In: Abstracts of the International FORTWIHR Conference, March 16-18, Freiburg, Germany, 1998.
  • Lades M., Berz D., Schmid U., Sheppard S.T., Kaminski N., Wondrak W., Wachutka G.:
    Numerical simulation of implanted top-gate 6H-SiC JFET characteristics.
    In: Abstracts of the 2nd European Conference on Silicon Carbide and related Materials, September 2-4 (ECSCRM 1998), Montpelliers, France, 1998, pp. 235-236.
  • Lades M., Kaindl W., Kaminski N., Niemann E., Wachutka G.:
    Einfluss der Dynamik der unvollständigen Ionisation auf SiC-Bauelemente.
    In: 27. Kolloquium für Halbleiterbauelemente und Materialgüte Silizium, October 26-27, Freiburg, Germany, 1998, pp. 17/1 - 17/7.
  • Lades M., Schenk A., Wachutka G.:
    Physical-Based Numerical Simulation of High Power Silicon Carbide Devices.
    In: International Conference on Simulation of Semiconductor Processes and Devices, September 2-4 (SISPAD 1998), München, 1998, pp. 251-254.
  • Ramminger S., Turkes P., Wachutka G.:
    Crack mechanism in wire bonding joints.
    In: Microelectronics Reliability, Vol. 38 (6-8), 1998, pp. 1301-1305.
  • Ramminger S., Türkes P., Wachutka G.:
    Crack Mechanism in Wire Bonding joints.
    In: Proc. ESREF (ESREF 1998), Copenhagen,Denmark, 1998, pp. 1301-1305.
  • Scheubert P., Anschütz F.-B., Awakowicz P., Wachutka G.:
    Dynamische Ionenstrommessungen in Niederdruckplasmen.
    In: Frühjahrstagung DPG, Bayreuth, Germany, 1998, pp. 322.
  • Schrag G., Zelder G., Kapels H., Wachutka G.:
    Numerical and experimental Analysis of Distributed electromechanical Parasitics in the Calibration of a Fully CMOS-Integrated Capacitive Pressure Sensor.
    In: Proc. of Eurosensors XII,Southampton, U.K. (EUROSENSORS 1998), 1998, pp. 1155-1158.
  • Schwefel R., Awakowicz P., Anschütz F.-B., Scheubert P.:
    Hydrogen-Hydrocarbon Plasma Chemistry in a 27MHz Inductive Coupled Plasma Reactor (ICP).
    In: 6th International Conference on Plasma Surface Engineering,September 14-18 (PSE 1998), Garmisch-Partenkirchen, Germany, 1998.
  • Schwefel R., Awakowicz P., Scheubert P., Anschütz F.-B.:
    Plasma chemistry in an inductive coupled reactor (ICP) for diamond deposition.
    In: 9th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide, September 13-18, Crete, Greece, 1998.
  • Seliger N., Gornik E., Furbock C., Pogany D., Habas P., Thalhammer R., Stoisiek M.:
    Characterization of semiconductor devices by infrared laser interferometry.
    In: E&I, Sonderheft Trends in der Mikroelektronik, Vol. 115 (7/8), 1998, pp. 403-403.
  • Thalhammer R.:
    Elektrothermische Modellierung und Charakterisierung moderner Halbleiterhochleistungsbauelemente.
    In: Tätigkeitsbericht FORTWIHR II, Munich, Germany, 1998, pp. 539.
  • Thalhammer R., Wachutka G.:
    Numerische Untersuchungen zu lasergestützten Meßprozessen.
    In: 27. Kolloquium für Halbleiterbauelemente und Materialgüte Silizium, October 26-27, Freiburg, Germany, 1998, pp. 15/1.
  • Thalhammer R., Deboy G., Knauf E., Kühbandner E., Wachutka G.:
    Calibration of electrothermal power device models using combined characterization techniques.
    In: Proc. of 10th Int. Symposium on Power Semiconductor Devices and ICs, June 3-6 (ISPSD 1998), Kyoto, Japan, 1998.
  • Thalhammer R., Deboy G., Knauf E., Kühbandner E., Wachutka G.:
    Kalibrierung elektrothermischer Modelle für Leistungsbauelemente mit Hilfe kombinierter Charakterisierungsmethoden.
    In: Frühjahrestagung DPG, March 23-27, Regenburg, Germany, 1998, pp. 700.
  • Thalhammer R., Furbock C., Seliger N., Deboy G., Gornik E., Wachutka G.:
    Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation.
    In: 10th International Symposium on Power Semiconductor Devices and ICs, June 3-6 (ISPSD 1998), Kyoto, Japan, 1998, pp. 199-202.
  • Thalhammer R., Fürböck C., Seliger N., Deboy G., Gornik E., Wachutka G.:
    Validation and Calibration of Electrothermal Device Models Using IR Laser Probing Techniques.
    In: International Conference on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators (MSM 1998), 1998, pp. 213-217.
  • Thalhammer R., Hille F., Wachutka G.:
    Numerical Simulation of infrared Laser Probing Techniques.
    In: International Conference on Simulation of Semiconductor Processes and Devices, September 2-4 (SISPAD 1998), Leuven, Belgium, 1998, pp. 276-279.
  • Voigt P., Wachutka G.:
    Simulation des thermischen Selbsttests an Beschleunigungssensoren mittels VHDL-AMS.
    In: Bericht zum Abschlußseminar des ASIS-2S Verbundprojekts, October 23, Munich, Germany, 1998.
  • Voigt P., Schrag G., Dürndorfer S., Hoppe R., Wachutka G.:
    Hierarchical Modeling of Electrofluidic Microsystems Based on Continuous Field Models and Kirchhoffian Network Theory.
    In: Abstracts of the International FORTWIHR Conference, March 16-18, 1998.
  • Voigt P., Schrag G., Wachutka G.:
    Electrofluidic full-system modelling of a flap valve micropump based on Kirchhoffian network theory.
    In: Sensors and Actuators A: Physical, Vol. 66 (1-3), 1998, pp. 9-14.
  • Voigt P., Schrag G., Wachutka G.:
    Methods for model generation and parameter extraction for MEMS.
    In: Conference on Simulation of semiconductor processes and devices, September 2-4 (SISPAD 1998), Leuven, Belgium, 1998, pp. 149-152.
  • Voigt P., Schrag G., Wachutka G.:
    Microfluidic system modeling using VHDL-AMS and circuit simulation.
    In: Microelectronics Journal, Vol. 29 (11), 1998, pp. 791-797.
  • Wachutka G.:
    CAD for Microdevices and Microsystems: Today's Potentials and Future Visions.
    In: Proc. of the 5th Int. Conference on Mixed Design of Integrated Circuits and Systems, June 18-20 (MIXDES 1998), Lodz, Poland, 1998, pp. 21-22.
  • Wachutka G., Schrag G., König E.-R., Voigt P.:
    Modeling Strategies for Microsystems.
    In: Proc. of 1st Int. Conf. on Modeling and Simulation of Microsystems, Semiconductors, Sensors and Actuators (MSM 1998), Santa Clara, USA, 1998, pp. 517-521.
  • Wachutka G., Schrag G., Voigt P.:
    Numerical Analysis of Distributed Inductive Parasitics Effects in High Power Bus Bars.
    In: Abstracts of the Workshop on "Scientific Computing in Electrical Engineering", Berlin, Germany, 1998, pp. 24.
  • Wachutka G., Voigt P., Schrag G.:
    CAD tools for microdevices and microsystems: today's demands, potentials and visions.
    In: Second International Conference on Advanced Semiconductor Devices and Microsystems, October 5-7 (ASDAM 1998), Smolenice, Slovakia, 1998, pp. 299-309.
  • Zelder G., Schrag G., Kapels H., Wachutka G.:
    Mechanische und kapazitive eigenschaften eines CMOS-kompatiblen mikrostrukturierten Drucksensors.
    In: Frühjahrestagung DPG, 1998, pp. 713.

    1997  Top
  • Anschütz F.-B., Awakowicz P., Scheubert P., Valentini H.-B.:
    Hot ions in multi-component plasmas.
    In: Proc. of XXIII Int. Conf. on Phenomena in Ionized Gases, July 17-22 (ICPIG 1997), Vol. 2, Toulouse, France, 1997, pp. 202-203.
  • Anschütz F.-B., Awakowicz P., Valentini H.-B.:
    Numerische Lösung des Mehrpunktrandwertproblems in Vielkomponentenplasmen mit endlicher Ionentemperatur.
    In: DPG Frühjahrstagung, March 3-6, Mainz, Germany, 1997, pp. 292.
  • Awakowicz P., Schwefel R., Werder M., Kasper W.:
    Diamond deposition and plasma diagnostics in a 27 MHz inductive coupled reactor (ICP).
    In: Diamond & Rel. Mat., Vol. 6, 1997, pp. 1816-1823.
  • Falck E., Stoisiek M., Wachutka G.:
    Modeling of parasitic inductive effects in power modules.
    In: IEEE International Symposium on Power Semiconductor Devices and IC's, May 26-29 (ISPSD 1997), Weimer, Germany, 1997, pp. 129-132.
  • Frost R.M., Awakowicz P.:
    Continuous calibration of a vacuum ultraviolet system from 65 to 125 nm by a cascade arc and comparison with the calibrated line radiation of a hollow cathode.
    In: Journal of Applied Optics, Vol. 36 (9), 1997, pp. 1994-2000.
  • Frost R.M., Awakowicz P.:
    experimental determination and R-matrix calculation of elctron impact excitation rate coefficients of neutral and singly ionized nitrogen.
    In: Proc. of XXIII Int. Conf. on Phenomena in Ionized Gases, July 17-22 (ICPIG 1997), Vol. 1, Toulouse, Frankreich, 1997, pp. 60-61.
  • Fuerboeck C., Thalhammer R., Seliger N., Pogany D., Deboy G., Wachutka G., Gornik E.:
    Lokale Temperaturbestimmung in Insulated Gate Bipolar Transistoren (IGBTs) mittels Lasersondenmesstechnik.
    In: Informationstagung für Mikroelektronik des Österreichischer Verband der Elektrotechniker, October 15-16 (OeVE Schriftenreihe Nr. 14), Vienna, Austria, 1997, pp. 117-122.
  • Hoppe R.H.W., Sieber E.R., Wachutka G., Wiest U.:
    Mathematical modeling and numerical simulation of a free boundary problem for an electromechanical micropump.
    In: Proc. of Conf. on Optimization of Nonlinear Systems and of Free Boundaries, 1997, pp. 65-78.
  • Lades M., Wachutka G.:
    Der Einfluß anisotroper Beweglichkeit auf 4H/6H-SiC-Leistungsbauelemente.
    In: 26. Kolloquium Halbleiter-Leistungsbauelemente und Materialgüte von Silizium, November 3-4, Freiburg, Germany, 1997, pp. 29/1 - 29/2.
  • Lades M., Wachutka G.:
    Extended anisotropic mobility model applied to 4H/6H-SiC devices.
    In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 1997), Boston, MA, USA,, 1997, pp. 169-171.
  • Lades M., Pschenitzka F., Wachutka G.:
    Analysis of Wide Band Gap Material Properties from Device Characteristics Using Device Simulation.
    In: Proc. of Int. Conf. on Micromaterials, April 16-18 (Micro Mat 1997), Berlin, Germany, 1997, pp. 577-580.
  • Lades M., Schenk A., Wachutka G.:
    Modelle für die numerische Simulation von SiC-Bauelementen.
    In: Frühjahrstagung des AK Festkörperphysik bei der DPG, March 17-21, Münster, Germany, 1997.
  • Porst A., Auerbach F., Brunner H., Deboy G., Hille F.:
    Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode).
    In: IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD 1997), Weimar, Germany, 1997, pp. 213-216.
  • Richter M., Mellmann J., Voigt P., Wachutuka G.:
    Modellierung mikrofluidischer Systeme.
    In: Frühjahrtagung des AK Festkörperphysik bei der DPG, March 17-21, Münster, Germany, 1997.
  • Scheubert P., Awakowicz P., Anschütz F.-B., Wachutka G.:
    A hydrodynamic model for a cylindrical Langmuir probe in a low pressure discharge.
    In: Proc. of XXIII Int. Conf. on Phenomena in Ionized Gases, July 17-22 (ICPIG 1997), Toulouse, France, 1997.
  • Scheubert P., Awakowicz P., Anschütz F.-B., Wachutka G.:
    A Hydrodynamic Model for Cylindrical Langmuir Probes.
    In: Proc. of 13th Int. Symp. on Plasma Chemistry, August 18-22 (ISPC 13), Beijing, China, 1997, pp. 624-629.
  • Scheubert P., Awakowicz P., Schwefel R.:
    Ein hydrodynamisches Modell für zylindrische Langmuirsonden unter Berücksichtigung endlicher Ionentemperatur.
    In: DPG Frühjahrtagung, March 3-6, Mainz, Germany, 1997, pp. 269-269.
  • Schrag G., Voigt P., Sieber E.-R., Wiest U., Hoppe R., Wachutka G.:
    Device- and System-Level Models for Micropump Simulation.
    In: Proc. of Int. Conf. on Micromaterials, April 16-18 (Micro Mat 1997), Berlin, Germany, 1997, pp. 941-944.
  • Schwefel R., Scheubert P., Awakowicz P.:
    Diagnostik, Simulation und Abscheidung von Diamantschichten in einem planaren, induktiv gekoppelten HF-Plasmareaktor (ICP).
    In: DPG Frühjahrstagung, March 3-6, Mainz, Germany, 1997, pp. 286-287.
  • Thalhammer R., Deboy G., Knauf E., Kuhbandner E., Wachutka G.:
    Calibration of electrothermal power device models using combined characterization techniques.
    In: IEEE International Symposium on Power Semiconductor Devices and IC's (ISPSD 1997), 1997, pp. 181-184.
  • Thalhammer R., Deboy G., Wachutka G.:
    Elektrothermische Simulation von Leistungsbaulelementen: Modellvalidierung durch interne Laserdeflektion.
    In: Frühjahrstagung des AK Festkörperphysik bei der DPG, March 3-6, Münster, Germany, 1997, pp. 764.
  • Thalhammer R., Hille F., Wachutka G.:
    Optische Charakterisierungsmethoden für das innerelektronische Verhalten von Leistungsbauelementen - ein Vergleich.
    In: 26. Kolloquium für "Halbleiter-Leistungsbauelemente und Materialgüte in Silizium", Freiburg, Germany, 1997.
  • Voigt P., Wachutka G.:
    Electro-fluidic microsystem modeling based on Kirchhoffian network theory.
    In: International Conference on Solid State Sensors and Actuators (TRANSDUCERS 1997), Vol. 2, Chicago, IL, USA, 1997, pp. 1019-1022.
  • Voigt P., Schrag G., Wachutka G.:
    Design and Numerical Analysis of an Electro-Mechanical Microsystem for Material Parameter Extraction.
    In: International Conference on Simulation and Design of Microsystems and Microstructures, September 17-19 (MICROSIM II), 1997, pp. 209-218.
  • Voigt P., Wachutka G.:
    HDL-A Simulation des thermischen Selbsttests am ASIS-Beschleunigungstensors.
    In: Bericht zum 3. Statusseminar des ASIS-2S Verbundprojekts, 1997.
  • Wachutka G.:
    Electrothermal Transport Properties of SiC Power Devices: Chances and Challenges.
    In: Proc. of the Material Research Society 1997 Fall Meeting, December 1-5 (MRS Fall 1997), Boston,USA, 1997.
  • Wachutka G.:
    Modeling of Electrothermal Effects: Demands and Limitations.
    In: "ESD Tutorial Notebook" (ed. by Electrostatic Discharge Association), 1997, pp. D1-D92.

    1996  Top
  • Anschütz F.-B., Awakowicz P., Valentini H.-B.:
    Numerical Solution of the Multiboundary Problem for Multicomponent Plasmas with Respect to Ion Temperature.
    In: Proc. 49th Gaseous Electronics Conference, October 20-24 (GEC 96), Argonne, IL, USA, 1996.
  • Awakowicz P., Kasper W.:
    Energy-mass spectrometry and automatic Langmuir probe measurements in reactive ICP plasmas for diamond deposition.
    In: Proc. Fifth Int. Conf. on Plasma Surface Engineering, September 9.-13, Garmisch, Germany, 1996.
  • Benstetter G.:
    Aniodischer Niedervoltbogen als Beschichtungsquelle.
    In: Journal für die Oberflächentechnik, 1996, pp. 13-16.
  • Falck E., Stoisiek M., Wachutka G.:
    Modellierung parasitärer induktiver Effekte in Leistungsmodulen.
    In: 25. Kolloquim Halblleiter-Leistungsbauelemente und Materialgüte von Silizium, Novermber 4-5, Freiburg, Germany, 1996.
  • Frost R.M., Awakowicz P.:
    Calculated and measured rate coefficients for electron impact excitation of neutral and singly ionized nitrogen.
    In: Proc. 49th Gaseous Electronics Conference, October 20-24 (GEC 1996), Argonne, IL, USA, 1996.
  • Kasper W., Awakowicz P.:
    Automatic Langmuir probe measurements in reactive rf-plasmas.
    In: Proc. Fifth Int. Conf. on Plasma Surface Engineering, Garmisch, Germany, 1996.
  • Kasper W., Awakowicz P.:
    Automatische Langmuir-Sondenmessung an reaktiven HF-Plasmen.
    In: 7. Bundesdeutsche Fachtagung f. Plasmatechnologie, March 13-14, Bochum, Germany, 1996.
  • Kasper W., Awakowicz P.:
    Energie-Massenspektoskopie und automatische Langmuir-Sondenmessung an reaktiven ECWR-Plasmen.
    In: 7. Bundesdeutsche Fachtagung f. Plasmatechnologie, March 13-14, Bochum, Germany, 1996.
  • Klick M., Rehak W., Kasper W., Awakowicz P., Franz G.:
    Innovative plasma diagnostic and control of process in reactive low-temperature plasmas.
    In: Proc. Fifth Int. Conf. on Plasma Surface Engineering, September 9.-13, 1996.
  • Lades M., Schenk A., Krumbein U., Wachutka G., Fichtner W.:
    Temperature-dependent study of 6H-SiC pin-diode reverse characteristics.
    In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 1996), Tokyo, Japan, 1996, pp. 55-56.
  • Lades M., Schenk A., Krumbein U., Fichtner W., Wachutka G.:
    Numerische Untersuchungen zum Sperrverhalten von 6H-SIC PIN-Dioden.
    In: 25. Kolloquium "Halbleiter-Leistungsbauelemente und Materialgüte von Silizium", November 4-5, Freiburg, Germany, 1996, pp. 15/1 - 15/2.
  • Racko J., Donoval D., Wachutka G.:
    Refined Analytical Model of Combined Thermionic Emission and Drift-Diffusion Current Flow, through Schottky Structure.
    In: Proc. of 26th European Solid State Device Research Conference, September 9-11 (ESSDERC 1996), Bologna, Italy, 1996, pp. 275-278.
  • Scheubert P., Awakowicz P., Kasper W.:
    Vergleich von Sondenmessungen mit Simulationsergebnissen eines eindimensionalen hydronamischen Plasmamodells.
    In: 7. Bundesdeutsche Fachtagung f. Plasmatechnologie, March 13-14, Bochum, Germany, 1996.
  • Scheubert P., Awakowicz P., Kasper W.:
    Comparison of Langmuir probe measurements with a hydrodynamic plasma model.
    In: , Garmisch, 1996.
  • Schmidt H.-P., Speckhofer G.:
    Experimental and theoretical investigation of high-pressure arcs. I. The cylindrical arc column (two-dimensional modeling).
    In: IEEE Transactions on Plasma Science, Vol. 24 (4), 1996, pp. 1229-1238.
  • Speckhofer G., Schmidt H.-P.:
    Experimental and theoretical investigation of high-pressure arcs. II. The magnetically deflected arc (three-dimensional modeling).
    In: IEEE Transactions on Plasma Science, Vol. 24 (4), 1996, pp. 1239-1248.
  • Trommer G., Müller R., Opitz S.:
    Passive Fiber Optic Inertial Measurement Unit - From Qualification towards series Production.
    In: Proc. SPIE - Int. Soc. Opt. Eng., August 5-6, Vol. 2837, Denver, CO, USA, 1996.
  • Voigt P., Wachutka G.:
    Analysis of Micropump Operation Using HDL-A Models.
    In: Proc. of 26th European Solid State Device Research Conference, September 9-11 (ESSDERC 1996), Bologna, Italy, 1996, pp. 199-202.
  • Voigt P., Wachutka G.:
    Microsystem Modeling Based on Kirchhoffian Net-Works.
    In: Proc. of 2nd ECCOMAS Conference on Numerical Methods in Engineering, September 9-13 (ECCOMAS 1996), Paris, France, 1996, pp. 69-69.
  • Voigt P., Schrag G., Wachutka G.:
    Micropump Macromodel for Standard Circuit Simulators Using HDL-AMS.
    In: Proc. of Eurosensors X, September 9-11 (EUROSENSORS 1996), Leuven, Belgium, 1996, pp. 1361-1364.
  • Wachutka G.:
    Physical-based Modeling of Microdevices and Systems: Present State and Challenges.
    In: Proc. of 7th Micromechanics Europe Workshop, October 21-22 (MME 1996), Barcelona, Spain, 1996.

    1995  Top
  • Awakowicz P., Behringer K.:
    Population densities and rate coefficients for electron impact excitation in singly ionized oxygen.
    In: Plasma Physics and Controlled Fusion, Vol. 37 (5), 1995, pp. 551-568.
  • Awakowicz P., Cirpan G., Kasper W.:
    Automatic Langmuir Probe and Energy-Mass Spectroscopy Measurements in Methane-Hydrogen Plasmas.
    In: Proc. of Int. Conf. on Phenomena in ionized Gases (ICPIG 1995), 1995.
  • Deboy G., Müller U., Wachutka G.:
    Charakterisierung von Leistungsdioden durch interne Infrarot-Deflektionsspektroskopie.
    In: Abstracts of LASER 95 (LASER 1995), 1995, pp. 78.
  • Deboy G., Thalhammer R., Wachutka G.:
    Ladungsträgerverteilung und Temperaturprofil von IGBTs in Experiment und Simulation.
    In: 24. Kolloquim für Halbleiterbaulemente und Materialgüte Silizium, November 13-14, Freiburg, Germany, 1995.
  • Frank J., Wachutka G., Funk J., Bächtold M.:
    Analysis of piezoresistive structures using multidimensional process and device simulation.
    In: The Electrochemical Society Interface (Electrochem. Soc. Int.), Vol. 3 (3), 1995, pp. 728.
  • Frank J., G. Wachutk., Funk J., Bächtold M.:
    Analysis of Piezoresistive Using Multidimensional Process and Device Simulation.
    In: International Conference on Simulation of Semiconductor Processes and Devices (SISDEP 1995), Vol. 6, 1995, pp. 22-25.
  • Frost R., Awakowicz P.:
    High Power Helium Cascade Arc as an Intensity Standard in the VUV Spectral RAnge from 60 to 120 nm.
    In: Proc. of Int. Conf. on Phenomena in ionized Gases (ICPIG 1995), New Jersey, USA, 1995.
  • Kasper W., Awakowicz P.:
    Langmuir Probe and Energy-Mass Spectroscopy Measurements in ECWR Plasmas for diamond Deposition.
    In: ISPC 12, Minneapolis, MN, USA, 1995.
  • Lades M., Frank J., Funk J., Wachutka G.:
    Analysis of piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation.
    In: Proc. Conference in Simulation of Semiconductor Devices and Processes (SISDEP 1995), Erlangen, Germany, 1995.
  • Riccobene C., Baltes H., Gärtner K., Fichtner W., Wachutka G.:
    Full three-dimensional numerial analysis of multi-collector magnetotransistors with directional sensitivity.
    In: Sensors and Actuators A: Physical, Vol. 46 (1-3), 1995, pp. 289-293.
  • Riccobene C., Gärtner K., Wachutka ., Baltes H. and Fichtner W.:
    First Three-Dimensional Numerical Analysis of Magnetic Vector Probe.
    In: Verhandl. DPG(VI) 30 HL-31.9, 1995, pp. 1305.
  • Speckhofer G.:
    Experimental Investigation of Magnetically Deflected High Pressure Argon Arcs.
    In: Proc. of Int. Conf. on Phenomena in ionized Gases (ICPIG 1995), New Jersey, USA, 1995.
  • Speckhofer G.:
    Three Dimensional Modelling of Free Burning Arcs.
    In: Proc. of Int. Conf. on Phenomena in ionized Gases (ICPIG 1995), New Jersey, USA, 1995.
  • Thalhammer R., Deboy G., Keilitz W., Muller U., Wachutka G.:
    Electrothermal Effects in Semiconductor Power Devices Analyzed by Numerical Simulation and Internal Laser Deflection Measurement.
    In: Proc. Of International Semiconductor Device Research Symposium (ISDRS 1995), Vol. 51, Charlottesville, USA, 1995.
  • Wachutka G.:
    Consistent treatment of carrier emission and capture kinetics in electrothermal and energy transport models.
    In: Microelectronics Journal, Vol. 26 (2-3), 1995, pp. 307-315.
  • Wachutka G.:
    Problem-oriented modeling of coupled physical effects in microtransducers and electronic devices.
    In: Proceedings., 1995 20th International Conference on Microelectronics (MIEL 1995), Vol. 2, 1995, pp. 539-547.
  • Wachutka G.:
    Tailored modeling of microdevices and systems using thermodynamic methods.
    In: 4th International Conference on Solid-State and Integrated Circuit Technology, October 24-28 (ICSICT 1995), Beijing, China, 1995, pp. 613-615.
  • Wachutka G.:
    Tailored modeling: A way to the 'virtual microtransducer fab'?.
    In: Sensors and Actuators A: Physical, Vol. 47 (1-3), 1995, pp. 603-612.
  • Wachutka G., Voigt P.:
    Computer Aided Training in Design and Fabrication of Microdevices and Systems.
    In: Proceedings of 3rd Int. Conference on Computer Aided Engineering Education, 1995, pp. 345-345.
  • Wachutka G., Voigt P.:
    Computer-Aided Training in Design and Fabrication of Microdevices and Systems.
    In: Proc. of the 3rd Int. Conf. on Computer Aided Engineering Education, September 13-15 (CAEE 1994), Bratislava, Slovakia, 1995, pp. 345-350.

    1994  Top
  • Castagnetti R., Riccobene C., Schneider M., Wachutka G., Baltes H.:
    Magnetotransistors in SOI technology.
    In: Technical Digest International Electron Devices Meeting (IEDM 1994), 1994, pp. 147-150.
  • Riccobene C., Gartner K., Wachutka G., Baltes H., Fichtner W.:
    First three-dimensional numerical analysis of magnetic vector probe.
    In: Technical Digest International Electron Devices Meeting (IEDM 1994), 1994, pp. 727-730.
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