Lehrstuhl für Technische Elektrophysik - TU München

Praktikum Halbleiterbauelemente der Hochleistungselektronik

Labcourse on Highpower Semiconductor Devices

 
General Information
   
Modul Number
 
EI7259
Course of Studies
  Master EI / MSPE / Diplom EI
ECTS   6
Modus
 
 
Block course
The course will be held separately in german and english language
groups of 2 students
 
Duration   5 days, 8:00-16:00
No. of Participants
 
 
Group 1: 12 students
Group 2: 12 students
 

Location

  Building N4, room N-1408B (basement)
Exam  

- written report per person (10% of final grade)

- oral exam with own report as auxiliary material (90% of final grade)

Logbook/Report  
 
Written report which can be used and will be reviewed during the oral exam (10% of the final grade), 1 report per person
 

Registration for the Course 

 
 
Tum Online
 
Registration for the Exam
 
 
TUM Online
First day of the labcourse
 
 
 
 
Next courses 
   
Date   
 
Group 1: 09. - 13.09.2019
Group 2: 16. - 20.09.2019
 
 
Exam
 
 
Group 1: 25.09.2019
Group 2: 02.10.2019
 
you will get your time slot during the lab course
oral exam will be 90% of your final grade
 
Preperation
 
Tasks to prepare the next course (pdf file, please choose your language): german or english
 
Literature and online research:
Basic functionality of MOSFETs, IGBTs, PIN-diodes: designs, functionality, forward and reverse recovery behavior, breakdown behavior, current voltage characteristics, temperature dependence MOSFET: output and transfer characteristics, body diode
Literature  
 
For example:
Physics of semiconductor devices, Sze (chapters 2,8)
Power semiconductors, Linder
 
Contact   R. Schönmann
W. Hölzl
     
Please be punctual. Students that are late are replaced by the next student on the waiting list and therefore cannot participate.
     
     
     
Seite zuletzt aktualisiert am   07.05.2019

 

 

 

 

 

Fakultät für Elektrotechnik und Informationstechnik

TU München